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参数资料
| 型号： | 2SK740-E |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 6/9页 |
| 文件大小： | 1358K |
| 代理商： | 2SK740-E |
2SK740
Rev.2.00 Sep 07, 2005 page 4 of 6
0.5
0.4
0.3
0.2
0.1
0
40
80
120
160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
2 A
5 A
10 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
0.5
0.2
0.5
1.0
5
10
20
1.0
2
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
–25
°C
Ta = 25
°C
75
°C
VGS = 10 V
Pulse Test
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
500
200
50
20
10
5
100
0.5
1.0
2
5
10
20
50
di/dt = 50 A/
s
VGS = 0
Ta = 25
°C
Pulse Test
Typical Capacitance
vs. Drain to Source Voltage
10,000
1,000
100
10
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Crss
VGS = 0
f = 1 MHz
Coss
Ciss
Dynamic Input Characteristics
200
160
120
80
40
0
8
16
24
32
40
Gate Charge Qg (nc)
20
16
12
8
4
0
Gate
to
Source
Voltage
V
GS
(V)
25 V
VDD = 100 V
VDS
ID = 10 A
VGS
50 V
VDD = 100 V
25 V
50 V
Drain
to
Source
Voltage
V
DS
(V)
50 V
Switching Characteristics
500
100
50
20
10
5
200
Switching
Time
t
(ns)
0.2
0.5
1.0
2
5
20
Drain Current ID (A)
td (on)
10
td (off)
tr
VGS = 10 V VDD = 30 V
PW = 2
s, duty
1 %
tf
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