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参数资料
| 型号： | 2SK740 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 8/10页 |
| 文件大小： | 62K |
| 代理商： | 2SK740 |
2SK740
5
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
500
200
50
20
10
5
100
0.5
1.0
2
5
10
20
50
di/dt = 50 A/
s
VGS = 0
Ta = 25°C
Pulse Test
Typical Capacitance
vs. Drain to Source Voltage
10,000
1,000
100
10
0
1020
30
4050
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Crss
VGS = 0
f = 1 MHz
Coss
Ciss
Dynamic Input Characteristics
200
160
120
80
40
0
816
24
32
40
Gate Charge Qg (nc)
20
16
12
8
4
0
Gate
to
Source
Voltage
V
GS
(V)
25 V
VDD = 100 V
VDS
ID = 10 A
VGS
50 V
VDD = 100 V
25 V
50 V
Drain
to
Source
Voltage
V
DS
(V)
50 V
Switching Characteristics
500
100
50
20
10
5
200
Switching
Time
t
(ns)
0.2
0.5
1.0
2
5
20
Drain Current ID (A)
td (on)
10
td (off)
tr
VGS = 10 V VDD = 30 V
PW = 2
s, duty
1 %
tf
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相关PDF资料 |
PDF描述 |
|---|---|
| 2SK740 | 10 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK771 | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK787 | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK830 | 15 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK831 | 18 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK740(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK741 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK757 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 10A I(D) | SOT-186 |
| 2SK758 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-channel Power F-MOS FET |
| 2SK759 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-channel Power F-MOS FET |
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