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参数资料
| 型号： | 2SK880-GR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | USM, 2-2E1B, SC-70, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 584K |
| 代理商： | 2SK880-GR |
2SK880
2007-11-01
1
TOSHIBA SemiconductorTOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK880
Audio Frequency Low Noise Amplifier Applications
High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
High breakdown voltage: VGDS = 50 V
Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k
High input impedance: IGSS = 1 nA (max) at VGS = 30 V
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
10
mA
Drain power dissipation
PD
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14.0
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.2
1.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
4.0
15
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3
pF
NF (1)
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 10 Hz
5
Noise figure
NF (2)
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 1 kHz
1
dB
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK880-GR(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK880GRTE85LF | 制造商:Toshiba America Electronic Components 功能描述:MOSF N CH 50V 100MW USM |
| 2SK880Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | SC-70 |
| 2SK880-Y(TE85L,F) | 功能描述:JFET N-Ch Audio Amp Fet 15mS 1.0db 10V 0.5mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK881 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL JUNCTION TYPE (FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS) |
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