- 您现在的位置：买卖IC网 > PDF目录50007 > 2SK880 N-CHANNEL, Si, SMALL SIGNAL, JFET PDF资料下载
参数资料
| 型号： | 2SK880 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | 2-2E1B, USM, SC-70, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 170K |
| 代理商： | 2SK880 |
2SK880
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK880
Audio Frequency Low Noise Amplifier Applications
High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
High breakdown voltage: VGDS = 50 V
Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k
High input impedance: IGSS = 1 nA (max) at VGS = 30 V
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-50
V
Gate current
IG
10
mA
Drain power dissipation
PD
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Marking
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14.0
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.2
-1.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
4.0
15
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3
pF
NF (1)
VDS = 10 V, RG = 1 kW
ID = 0.5 mA, f = 10 Hz
5
Noise figure
NF (2)
VDS = 10 V, RG = 1 kW
ID = 0.5 mA, f = 1 kHz
1
dB
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK926 | 10 A, 250 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK928 | 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK932-23 | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK932-22 | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK932-21 | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK880_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
| 2SK880BL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SC-70 |
| 2SK880-BL(TE85L,F) | 功能描述:JFET N-CH FET 1.0dB AMP AUDIO -50 VGDS 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK880GR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 2.6MA I(DSS) | SC-70 |
| 2SK880-GR | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Audio Frequency Low Noise Amplifier Applications |
发布紧急采购，3分钟左右您将得到回复。