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参数资料
| 型号： | 2STD1360T4 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封装： | ROHS COMPLIANT, DPAK-3 |
| 文件页数： | 5/11页 |
| 文件大小： | 276K |
| 代理商： | 2STD1360T4 |
2STD1360, 2STF1360, 2STN1360
Electrical characteristics
Doc ID 11783 Rev 2
3/11
2
Electrical characteristics
TCASE = 25°C; unless otherwise specified.
2.1
Typical characteristics (curves)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 80 V
100
nA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
100
nA
VBE(on)
Base-emitter on voltage
VCE = 2 V
IC = 100 mA
630
650
730
mV
VCE(sat)
(1)
1.
Pulse test: pulse duration
≤ 300 s, duty cycle ≤ 2 %
Collector-emitter
saturation voltage
IC = 2 A
IB = 100 mA
IC = 3 A _
IB = 150 mA
130
180
300
500
mV
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 2 A
_ IB = 100 mA
0.9
1.2
V
hFE
(1)
DC current gain
IC = 100 mA_ VCE = 2 V
IC = 1 A
_ VCE = 2 V
80
160
400
td
tr
ts
tf
Resistive load
Delay time
Rise time
Storage time
Fall time
IC = 3 A
VCC = 10 V
IB(on) = - IB(off) = 300 mA
VBE(off) = - 5 V
17
81
620
54
20
100
720
65
ns
fT
Transition frequency
IC = 0.1 A __ VCE = 10 V
130
MHz
Figure 2.
DC current gain (VCE = 5 V)
Figure 3.
DC current gain (VCE = 2 V)
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