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参数资料
| 型号： | 2STW4468 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-247AA |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 161K |
| 代理商： | 2STW4468 |
2STW4468
Electrical characteristics
3/9
2
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 200 V
0.1
A
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
0.1
A
V(BR)CEO
(1)
1.
Pulse duration = 300 s, duty cycle
≤ 1.5 %
Collector-emitter
breakdown voltage (IB = 0)
IC = 50 mA
140
V
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 A
200
V
V(BR)EBO (1)
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
6V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 5 A
IB = 500 mA
IC = 7 A
IB = 700 mA
0.5
0.7
V
VBE
Base-emitter voltage
VCE = 5 V
IC = 5 A
1.3
V
hFE
DC current gain
IC = 3 A
VCE = 4 V
IC = 5 A
VCE = 4 V
70
50
140
fT
Transition frequency
IC = 0.5 A
VCE = 12 V
20
MHz
CCBO
Collector-base
capacitance
(IE = 0)
VCB = 10 V
f = 1 MHz
150
pF
ton
tstg
tf
Resistive Load
Turn-on time
Storage time
Fall time
VCC = 60 V
IC = 5 A
IB1 = -IB2 = 0.5 A
0.22
4.3
0.5
s
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