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参数资料
| 型号： | 2STX2360 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 152K |
| 代理商： | 2STX2360 |
2STX2360
Electrical characteristics
Doc ID 17226 Rev 1
3/9
2
Electrical characteristics
TCASE = 25 °C; unless otherwise specified.
2.1
Typical characteristics (curves)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = - 60 V
-100
nA
IEBO
Emitter cut-off current
(IC = 0)
VEB = - 6 V
-100
nA
VBE(on)
Base-emitter on voltage
VCE = - 2 V
IC = - 100 mA -630
-650
-730
mV
VCE(sat)
(1)
1.
Pulse test: pulse duration
≤ 300 s, duty cycle ≤ 2 %
Collector-emitter
saturation voltage
IC = - 2 A
IB = - 100 mA
IC = - 3 A _
IB = - 150 mA
-200
-300
-320
-500
mV
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = - 2 A
_ IB = -100 mA
-0.9
-1.2
V
hFE
(1)
DC current gain
IC = - 100 mA_ VCE = - 2 V
IC = - 1 A
_ VCE = - 2 V
80
160
400
td
tr
ts
tf
Resistive load
Delay time
Rise time
Storage time
Fall time
IC = - 3 A
VCC = - 10 V
IB(on) = - IB(off) = - 300 mA
VBE(off) = 5 V
10
75
250
35
15
100
350
50
ns
fT
Transition frequency
IC = - 0.1 A __ VCE = - 10 V
130
MHz
Figure 2.
DC current gain (VCE = - 2 V)
Figure 3.
DC current gain (VCE = - 5 V)
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