参数资料
型号: 32CTQ025
厂商: Vishay Semiconductors
文件页数: 1/7页
文件大小: 156K
描述: DIODE SCHOTTKY 25V 15A TO-220AB
标准包装: 1,000
电压 - 在 If 时为正向 (Vf)(最大): 490mV @ 15A
电流 - 在 Vr 时反向漏电: 1.75mA @ 25V
电流 - 平均整流 (Io)(每个二极管): 15A
电压 - (Vr)(最大): 25V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: *32CTQ025
VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Oct-11
1
Document Number: 94202
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 15 A
FEATURES
? 150 °C TJ
operation
? Low forward voltage drop
? High frequency operation
? High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
? Compliant to RoHS Directive 2002/95/EC
? Designed and qualified according to JEDEC-JESD47
? Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-32CTQ... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature.
Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
IF(AV)
2 x 15 A
VR
25 V, 30 V
VF
at I
F
0.40 V
IRM
max. 97 mA at 125 °C
TJ
max. 150 °C
Diode variation Common cathode
EAS
13 mJ
Anode
13Common
2
Base
2
common
cathode
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV)
Rectangular waveform 30 A
VRRM
25/30 V
IFSM
tp
= 5 μs sine
900 A
VF
15 Apk, TJ
= 125 °C
0.40 V
TJ
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-32CTQ025PbF VS-32CTQ025-N3 VS-32CTQ030PbF VS-32CTQ030-N3
UNITS
Maximum DC reverse voltage
VR
25 25 30 30 V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
IF(AV)
50 % duty cycle at TC
= 115 °C, rectan
gular waveform
30
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse 250VRRM
applied
900
Non-repetitive avalanche energy
EAS
TJ
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH
13 mJ
Repetitive avalanche current
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ
maximum V
A
= 1.5 x V
R
typical
3A
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