参数资料
| 型号： | 34LC02-I/MS |
| 厂商： | Microchip Technology |
| 文件页数： | 8/36页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 2KBIT 1MHZ 8MSOP |
| 产品培训模块： | I2C Serial EEPROM |
| 标准包装： | 100 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 1MHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 2.2 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 管件 |
| 产品目录页面： | 1445 (CN2011-ZH PDF) |
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34AA02/34LC02
4.2
Page Write
The write control byte, word address and the first data
byte are transmitted to the 34XX02 in the same way as
in a byte write. Instead of generating a Stop condition,
the master transmits up to 15 additional data bytes to
the 34XX02, which are temporarily stored in the on-
chip page buffer and will be written into the memory
after the master has transmitted a Stop condition. Upon
receipt of each word, the four lower order Address
Pointer bits are internally incremented by one. The
higher order four bits of the word address remain
constant. If the master should transmit more than 16
bytes prior to generating the Stop condition, the
address counter will roll over and the previously
received data will be overwritten. As with the byte write
operation, once the Stop condition is received, an
internal write cycle will begin ( Figure 4-2 ). If an attempt
is made to write to the array when the hardware write
protection has been enabled, the device will acknowl-
edge the command, but no data will be written. The
write cycle time must be observed even if the write
protection is enabled.
FIGURE 4-1:
BYTE WRITE
Note:
Page write operations are limited to
writing bytes within a single physical page,
regardless of the number of bytes actually
being written. Physical page boundaries
start at addresses that are integer multi-
ples of the page buffer size (or ‘page size’)
and end at addresses that are integer mul-
tiples of [page size – 1]. If a Page Write
command attempts to write across a phys-
ical page boundary, the result is that the
data wraps around to the beginning of the
current page (overwriting data previously
stored there), instead of being written to
the next page, as might be expected. It is
therefore necessary for the application
software to prevent page write operations
that would attempt to cross a page
boundary.
Bus Activity
Master
S
T
A
R
T
Control
Byte
Word
Address
Data
S
T
O
P
SDA Line
S
P
A
A
A
Bus Activity
FIGURE 4-2:
PAGE WRITE
C
K
C
K
C
K
Bus Activity
Master
S
T
A
R
T
Control
Byte
Word
Address (n)
Data (n)
Data (n + 1)
Data (n + 15)
S
T
O
P
SDA Line
S
P
A
A
A
A
A
Bus Activity
C
K
C
K
C
K
C
K
C
K
DS22029F-page 8
? 2011 Microchip Technology Inc.
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 34LC02T-E/MNY | 功能描述:电可擦除可编程只读存储器 2K 256X8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 34LC02T-E/MS | 功能描述:电可擦除可编程只读存储器 2K 256X8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 34LC02T-E/OT | 功能描述:电可擦除可编程只读存储器 2K 256 X 8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 34LC02T-E/SN | 功能描述:电可擦除可编程只读存储器 2K 256X8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 34LC02T-E/ST | 功能描述:电可擦除可编程只读存储器 2K 256X8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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