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参数资料
| 型号： | 3LN03SS |
| 厂商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | General-Purpose Switching Device Applications |
| 中文描述： | 通用开关器件应用 |
| 文件页数： | 1/4页 |
| 文件大小： | 37K |
| 代理商： | 3LN03SS |
3LN03SS
No.8231-1/4
Features
Low ON-resistance.
High-speed switching.
2.5V drive.
High ESD Voltage (TYP 300V)
[Built-in one side diode for protection between Gate-to-Source].
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
A
A
W
Drain-to-Source Voltage
Gate-to-Source Voltage (*1)
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
(
*
1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
30
10
0.35
1.4
0.15
150
PW
≤
10
μ
s, duty cycle
≤
1%
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=8V, VDS=0
VDS=10V, ID=100
μ
A
VDS=10V, ID=180mA
ID=180mA, VGS=4V
ID=90mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
30
V
μ
A
μ
A
V
S
pF
pF
pF
1
1
0.4
0.36
1.3
0.6
0.7
0.8
1.6
30
0.9
1.15
2.4
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : YG
7
3.5
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8231
22805PE TS IM TA-100963
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
3LN03SS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 3LN04MH | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 3LP01C | Ultrahigh-Speed Switching Applications |
| 3LP01M | P-Channel Silicon MOSFET |
| 3LP01N | P-Channel Silicon MOSFET(Ultrahigh-Speed Switching Applications)(超高速转换应用的P沟道硅MOSFET) |
| 3LP01SS | Ultrahigh-Speed Switching Applications |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 3LN03SS-TL-E | 制造商:SANYO 功能描述:Nch 30V 0.35A rreo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 30V 0.35A SOT89 |
| 3LN04CH | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 3LN04CH-TL-E | 制造商:SANYO 功能描述:Nch 30V 0.35A bogR Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 30V 0.35A SOT346 制造商:Sanyo 功能描述:0 |
| 3LN04MH | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device |
| 3LN04MH-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 30V 0.35A SOT89 |
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