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参数资料
| 型号： | 3N170 |
| 厂商： | LINEAR INTEGRATED SYSTEMS INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | PTSE 8C 8#16 PIN RECP |
| 中文描述： | 30 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 |
| 封装： | METAL PACKAGE-4 |
| 文件页数： | 1/2页 |
| 文件大小： | 210K |
| 代理商： | 3N170 |
FEATURES
Direct Replacement for INTERSIL 3N170 & 3N171
LOW DRAIN TO SOURCE RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
r
ds(on)
≤
200
t
d(on)
≤
3.0ns
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65 to +150 °C
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Current
Drain to Source
Maximum Voltages
Drain to Gate
Drain to Source
Gate to Source
300mW
30mA
±35V
25V
±35V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL
CHARACTERISTIC
BV
DSS
Drain to Source Breakdown Voltage
V
DS(on)
Drain to Source "On" Voltage
3N170
V
GS(th)
Threshold Voltage
3N171
I
GSS
Gate Leakage Current
I
DSS
Drain Leakage Current "Off"
I
D(on)
Drain Current "On"
g
fs
Forward Transconductance
r
ds(on)
Drain to Source "On" Resistance
C
rss
Reverse Transfer Capacitance
C
iss
Input Capacitance
C
db
Drain to Body Capacitance
MIN
25
1.0
1.5
10
1000
TYP MAX
UNITS
CONDITIONS
I
D
= 10μA, V
GS
= 0V
I
D
= 10mA, V
GS
= 10V
2.0
2.0
2.0
10
10
200
1.3
5.0
5.0
Gate to Source
V
V
DS
= 10V, I
D
= 10μA
pA
nA
mA
μS
V
GS
= -35V, V
DS
= 0V
V
DS
= 10V, V
GS
= 0V
V
GS
= 10V, V
DS
= 10V
V
DS
= 10V, I
D
= 2.0mA,
f
= 1.0kHz
V
GS
= 10V, I
D
= 0A,
f
= 1.0kHz
V
DS
= 0V, V
GS
= 0V,
f
= 1.0MHz
V
DS
= 10V, V
GS
= 0V,
f
= 1.0MHz
V
DB
= 10V,
f
= 1.0MHz
pF
* Body tied to Case.
G
S
D
C
2
1
4
3
BOTTOM VIEW
TO-72
Linear Integrated Systems
3N170 3N171
N-CHANNEL MOSFET
ENHANCEMENT MODE
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
相关PDF资料 |
PDF描述 |
|---|---|
| 3N170-1 | N-CHANNEL MOSFET ENHANCEMENT MODE |
| 3N189 | DUAL P CHANNEL ENHANCEMENT MODE MOSFET |
| 3N200 | SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
| 3N201 | 30V N-Channel PowerTrench MOSFET |
| 3N211 | Dual Gate Mosfet VHF Amplifier(N-Channel, Depletion) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 3N170_TO-72 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:an enhancement mode N-Channel Mosfet |
| 3N170-1 | 制造商:LINEAR 制造商全称:LINEAR 功能描述:N-CHANNEL MOSFET ENHANCEMENT MODE |
| 3N170-71 | 制造商:CALOGIC 制造商全称:CALOGIC 功能描述:N-Channel Enhancement Mode MOSFET Switch |
| 3N171 | 制造商:Motorola Inc 功能描述: 制造商:Calogic LLC 功能描述:3N171 Series 35 V 50 mA N-Channel MOSFET Switch - TO-72 |
| 3N171_TO-72 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:an enhancement mode N-Channel Mosfet |
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