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参数资料
| 型号： | 40ETF12PbF |
| 厂商： | International Rectifier |
| 英文描述： | INPUT RECTIFIER DIODE |
| 中文描述： | 输入整流器二极管 |
| 文件页数： | 2/5页 |
| 文件大小： | 103K |
| 代理商： | 40ETF12PBF |
2
40EPS..PbF SAFE
IR Series
Bulletin I2179 rev. A 03/06
www.irf.com
T
J
Max. Junction Temperature Range
- 40 to 150
°C
Tstg
Max. Storage Temperature Range
- 40 to 150
°C
R
thJC
Max. Thermal Resistance Junction
0.6
°C/W
DC operation
to Case
R
thJA
Max. Thermal Resistance Junction
40
°C/W
to Ambient
R
thCS Typical Thermal Resistance, Case to
0.2
°C/W
Mounting surface , smooth and greased
Heatsink
wt
Approximate Weight
6 (0.21)
g (oz.)
T
Mounting Torque
Min.
6 (5)
Max.
12 (10)
Case Style
TO-247AC
JEDEC (Modified)
Marking Device
40EPS12
Thermal-Mechanical Specifications
Parameters
40EPS..
Units
Conditions
Kg-cm
(Ibf-in)
V
FM
Max. Forward Voltage Drop
1.1
V
@ 40A, T
J
= 25°C
r
t
Forward slope resistance
7.16
m
Ω
V
F(TO) Threshold voltage
0.74
V
I
RM
Max. Reverse Leakage Current
0.1
T
J =
25 °C
1.0
T
J = 150 °C
Electrical Specifications
Parameters
40EPS..
Units
Conditions
T
J =
150°C
V
R
= rated V
RRM
mA
I
F(AV)
Max. Average Forward Current
40
A
@ T
C
= 105° C, 180° conduction half sine wave
I
FSM
Max. Peak One Cycle Non-Repetitive
400
10ms Sine pulse, rated VRRMapplied
Surge Current
475
10ms Sine pulse, no voltage reapplied
I
2t
Max. I
2t for fusing
800
10ms Sine pulse, rated V
RRM
applied
1131
10ms Sine pulse, no voltage reapplied
I
2√t Max. I2√t for fusing
11310
A
2√s
t = 0.1 to 10ms, no voltage reapplied
Absolute Maximum Ratings
Parameters
40EPS..
Units
Conditions
A
2s
Part Number
V
RRM
, maximum
V
RSM
, maximum non repetitive
I
RRM
peak reverse voltage
150°C
VV
mA
40EPS08PbF
800
900
1
40ETF12PbF
1200
1300
Voltage Ratings
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