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参数资料
| 型号： | 40REC0770-QB-0L00 |
| 厂商： | MIMIX BROADBAND INC |
| 元件分类： | 通信及网络 |
| 英文描述： | 35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, PQCC28 |
| 封装： | 7 X 7 MM, ROHS COMPLIANT, QFN-28 |
| 文件页数： | 5/7页 |
| 文件大小： | 229K |
| 代理商： | 40REC0770-QB-0L00 |
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
35.0-45.0 GHz GaAs Receiver
QFN, 7x7 mm
Page 5 of 7
40REC0770-QB
October 2006 - Rev 05-Oct-06
App Note [1] Biasing - The device is operated by biasing VD=4.0V with ID=180 mA. Additionally, a mixer and doubler bias are also required
with VG2=-0.5V. Adjusting Vg2 above or below this value can adversely affect conversion gain, image rejection and intercept point
performance. It is recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the
most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single
transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of
the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically
the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative
gate bias is available before applying the positive drain supply.
Typical Application
Mimix Broadband's 30.0-46.0 GHz 40REC0770-QB GaAs MMIC Receiver can be used in saturated radio applications and linear modulation
schemes up to 128 QAM.
IR Mixer
LNA
Mimix Broadband MMIC-based 35.0-45.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 46 GHz)
RF IN
37.0-39.5 GHz
40REC0770-QB
BPF
Coupler
IF Out
2 GHz
LO(+2.0dBm)
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
AGC Control
Buffer
X2
MTTF
Bias Conditions: Vd=4.0V, Id=180 mA
MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate.
40REC0770-QB, MTTF (yrs) vs. Backplate Temperature (°C)
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
55
65
75
85
95
Temperature (°C)
MTTF
(Years)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 40REC0770-QB-0L0T | 制造商:MIMIX 制造商全称:MIMIX 功能描述:35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm |
| 40REC0770-QB-EV1 | 制造商:MIMIX 制造商全称:MIMIX 功能描述:35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm |
| 40RF-JMCS-G-1B-TF(N)(LF)(SN) | 制造商:JST Manufacturing 功能描述:CONN 40POS RCPT W/BOSSES 制造商:JST Manufacturing 功能描述:JMC Series Board to Board Compact Socket with Boss Absorption Misalignment Type |
| 40RF-JMCS-G-1B-TFN(LF) | 制造商:JST 功能描述:40RF-JMCS-G-1B-TF(N)LFSN |
| 40RF-JMCS-G-1-TF(N)(LF)(SN) | 制造商:JST Manufacturing 功能描述:CONN 40POS RCPT W/O BOSSES 制造商:JST Manufacturing 功能描述:40 Position 0.5mm Board to Board Absorbtion Misalignment type Receptacle |
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