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参数资料
| 型号： | 41HFR40 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 封装： | DO-5, 1 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 132K |
| 代理商： | 41HFR40 |
40HF(R) Series
7
Bulletin I20201 rev. D 01/05
www.irf.com
Fig. 11 - Forward Voltage Drop Characteristics
(up to 1200V)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 13 - Thermal Impedance Z
thJC Characteristics
Instantaneous Forward Voltage (V)
Instantaneous
Forward
Current
(A)
Square Wave Pulse Duration (s)
Transient
Impedance
Z
thJC
(K/W)
0.01
0.1
1
0.0001 0.001
0.01
0.1
1
10
Steady State Value
(DC Operation)
40HF(R) .. Series
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak
Half
Sine
Wave
Forward
Current
(A)
Pulse Train Duration (s)
Peak
Half
Sine
Wave
Forward
Current
(A)
Fig. 12 - Forward Voltage Drop Characteristics
(for 1400V, 1600V)
Instantaneous Forward Voltage (V)
Instantaneous
Forward
Current
(A)
1
10
100
1000
0
0.5
1
1.5
2
2.5
3
3.5
4
Tj = 25C
Tj = Tj Max
40HF (R) Series
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
40HF(R) Series
up to 1200V
Tj = 25C
Tj = Tj Max.
100
150
200
250
300
350
400
450
500
550
1
10
100
40HF(R) Series
Initial Tj = Tj Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
100
150
200
250
300
350
400
450
500
550
600
0.01
0.1
1
Maximum Non Repetitive Surge Current
40HF(R) Series
Initial Tj = Tj Max.
No Voltage Reapplied
Rated Vrrm Reapplied
Versus Pulse Train Duration.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 41HFR400 | 制造商:IRF 制造商全称:International Rectifier 功能描述:STANDARD RECOVERY DIODES |
| 41HFR400M | 制造商:IRF 制造商全称:International Rectifier 功能描述:STANDARD RECOVERY DIODES |
| 41HFR40M | 制造商:IRF 制造商全称:International Rectifier 功能描述:STANDARD RECOVERY DIODES |
| 41HFR40PBF | 制造商:Vishay 功能描述:Bulk |
| 41HFR60 | 功能描述:DIODE STD REC 600V 40A DO-5 RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
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