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参数资料
| 型号： | 42S32200 |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 为512k位× 32位× 4银行（64兆位）同步动态RAM |
| 文件页数： | 2/2页 |
| 文件大小： | 982K |
| 代理商： | 42S32200 |
PAGE . 2
STAD-
JAN.14.2005
RATING AND CHARACTERISTIC CURVES
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
Fig.4- MAXIMUM NON - REPETITIVE SURGE CURRENT
Fig.3- TYPICAL REVERSE CHARACTERISTICS
INST
ANT
ANEOUS
REVERSE
CURRENT
,m
A
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
AMPERES
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PEAK
FOR
W
ARD
SURGE
CURRENT
,
NO. OF CYCLE AT 60HZ
160
140
120
100
80
60
40
20
0
1
2
5
10
20
50
100
A
VERAGE
FOR
W
ARD
RECITIFIED
CURRENT
AMPERES
5.0
4.0
2.0
0
.375" 9.5mm LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
1.0
3.0
0
20
40
60
80
100
120
140
160
LEAD TEMPERAURE, C
O
.4
.5
.6
.7
.8
.9
1.0 1.1
50
0.1
10
1.0
.3
.2
T = 25 C
Pulse Width = 300 s
1% Duty Cycle
J
O
m
80-100V
50-60V
20-40V
20
40
60
80 100 120 140
10
1.0
0.10
0.01
.001
T= 25 C
J
O
T= 75 C
J
O
T = 100 C
J
O
V
=20-40V
V
=50-100V
RRM
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