参数资料
型号: 45DB041B
厂商: Atmel Corp.
英文描述: 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash
中文描述: 4兆位2.5伏,只有2.7伏,只有上DataFlash
文件页数: 19/33页
文件大小: 233K
代理商: 45DB041B
26
AT45DB041B
1938F–DFLSH–10/02
Figure 1. Algorithm for Sequentially Programming or Reprogramming the Entire Array
Notes:
1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by-
page.
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer
to Main Memory Page Program operation.
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page
within the entire array.
START
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
END
provide address
and data
BUFFER WRITE
(84H, 87H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
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