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参数资料
| 型号： | 48SD1616RPFK |
| 厂商： | MAXWELL TECHNOLOGIES |
| 元件分类： | DRAM |
| 英文描述： | 256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks |
| 中文描述： | 16M X 16 SYNCHRONOUS DRAM, 6 ns, DFP72 |
| 封装： | DFP-72 |
| 文件页数： | 7/42页 |
| 文件大小： | 596K |
| 代理商： | 48SD1616RPFK |
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48SD1616
M
em
o
ry
15
All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
256Mb (4-Meg X 16-Bit X 4-Banks) SDRAM
01.07.05 REV 4
From PRECHARGE state, command operation
To [DESL], [NOP]: When these commands are executed, the SDRAM enters the IDLE state after t
RP has
elapsed from the completion of precharge.
From IDLE state, command operation
To [DESL], [NOP], [PRE], or [PALL]: These commands result in no operation.
To [ACTV]: The bank specified by the address pins and the ROW address is activated.
To [REF], [SELF]: The SDRAM enters refresh mode (auto-refresh or self-refresh).
To [MRS]: The synchronous DRAM enters the mode register set cycle.
From ROW ACTIVE state, command operation
To [DESL], [NOP]: These commands result in no operation.
To [READ], [READ A]: A read operation starts. (However, an interval of t
RCD is required.)
To [WRIT], [WRIT A]: A write operation starts. (However, an interval of t
RCD is required.)
Write with auto-
precharge
H
x
DESL
Continue burst to end and pre-
charge
L
H
x
NOP
Continue burst to end and pre-
charge
L
H
L
H
BA, CA, A10
READ/READ A
ILLEGAL1
L
H
L
BA, CA, A10
WRIT/WRIT A
ILLEGAL1
L
H
BA, RA
ACTV
Other bank active
ILLEGAL on same bank4
L
H
L
BA, A10
PRE, PALL
ILLEGAL1
L
H
x
REF, SELF
ILLEGAL
L
MODE
MRS
ILLEGAL
Refresh ( auto-
refresh)
H
x
DESL
Enter IDLE after t
RC
L
H
x
NOP
Enter IDLE after t
RC
L
H
L
H
BA, CA, A10
READ/READ A
ILLEGAL3
L
H
L
BA, CA, A10
WRIT/WRIT A
ILLEGAL3
L
H
BA, RA
ACTV
ILLEGAL3
L
H
L
BA, A10
PRE, PALL
ILLEGAL3
L
H
x
REF, SELF
ILLEGAL
L
MODE
MRS
ILLEGAL
1. Illegal for same bank, except for another bank
2. NOP for same bank, except for another bank
3. Illegal for all banks
4. If t
RRD is not satisfied, this operation is illegal
5. An interval of t
DPL is required between the final valid data input and the precharge command
CURRENT STATE
CS
RAS
CAS
WE
ADDRESS
COMMAND
OPERATION
相关PDF资料 |
PDF描述 |
|---|---|
| 48SD1616 | 256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks |
| 48SD3208RPFK | CAP 1.5UF 50V CERAMIC MONO 20% |
| 48SD3208RPFE | 256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks |
| 48SD3208RPFH | 256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks |
| 48SD3208RPFI | CAP 1.5UF 50V CERAMIC MONO 20% |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 48SD3208 | 制造商:MAXWELL 制造商全称:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks |
| 48SD3208RPFE | 制造商:MAXWELL 制造商全称:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks |
| 48SD3208RPFH | 制造商:MAXWELL 制造商全称:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks |
| 48SD3208RPFI | 制造商:MAXWELL 制造商全称:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks |
| 48SD3208RPFK | 制造商:MAXWELL 制造商全称:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks |
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