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参数资料
| 型号： | 4AK27 |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道场效应晶体管高速电源开关 |
| 文件页数： | 2/9页 |
| 文件大小： | 53K |
| 代理商： | 4AK27 |
4AK27
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
5A
Drain peak current
I
D(pulse)
Note1
20
A
Body-drain diode reverse drain current
I
DR
5A
Avalanche current
I
AP
5A
Avalanche energy1
E
AR
2.1
mJ
Channel dissipation
Pch(Tc=25C)
Note2
28
W
Channel dissipation
Pch
Note2
4W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. 4 devices poeration
3. Value at Tch=25C, Rg
≥ 50
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