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参数资料
| 型号： | 4N25-X000 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, PLASTIC, DIP-6 |
| 文件页数： | 3/9页 |
| 文件大小： | 118K |
| 代理商： | 4N25-X000 |
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 81864
3
Rev. 1.0, 11-Mar-08
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27 and 4N28 respectively.
Note
Indicates JEDEC registered values.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 2 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
COUPLER
Isolation test voltage (2)
Peak, 60 Hz
VIO
5300
V
Saturation voltage, collector emitter
ICE = 2.0 mA, IF = 50 mA
VCE(sat)
0.5
V
Resistance, input output (2)
VIO = 500 V
RIO
100
G
Ω
Capacitance, input output
f = 1 MHz
CIO
0.5
pF
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
DC current transfer ratio
VCE = 10 V, IF = 10 mA
4N25
CTRDC
20
50
%
4N26
CTRDC
20
50
%
4N27
CTRDC
10
30
%
4N28
CTRDC
10
30
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Rise and fall times
VCE = 10 V, IF = 10 mA, RL = 100
Ω
tr, tf
2.0
s
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
i4n25_01
100
10
1
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
I
F - Forward Current (mA)
V
F
-For
w
ard
V
oltage
(
V
)
T
A = - 55 °C
T
A = 25 °C
T
A = 85 °C
i4n25_02
0.0
0.5
1.0
1.5
0
10
100
I
F - LED Current (mA)
NCTR
NCTR(SAT)
N
CTR
-
N
ormalized
CTR
CE(sat) = 0.4 V
V
CE = 10 V, IF = 10 mA, TA = 25 °C
T
A = 25 °C
Normalized to:
1
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相关代理商/技术参数 |
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|---|---|
| 4N25X0009T | 制造商:INFINEON 功能描述:* |
| 4N25-X001 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>20% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N25-X006 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>20% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N25-X007 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Optocoupler, Phototransistor Output, With Base Connection |
| 4N25-X007T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>20% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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