参数资料
型号: 4N25GV
厂商: VISHAY SEMICONDUCTORS
元件分类: 光电耦合器
英文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封装: 0.400 INCH, ROHS COMPLIANT, PLASTIC, DIP-6
文件页数: 2/8页
文件大小: 134K
代理商: 4N25GV
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83530
140
Rev. 2.0, 26-Oct-09
4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors Optocoupler, Phototransistor Output
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
Note
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5V
Forward current
IF
60
mA
Forward surge current
tp ≤ 10 s
IFSM
3A
Power dissipation
Pdiss
70
mW
Junction temperature
Tj
125
°C
OUTPUT
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Power dissipation
Pdiss
70
mW
Junction temperature
Tj
125
°C
COUPLER
Isolation test voltage (RMS)
VISO
5000
VRMS
Total power dissipation
Ptot
200
mW
Ambient temperature range
Tamb
- 55 to + 100
°C
Storage temperature range
Tstg
- 55 to + 125
°C
Soldering temperature (2)
2 mm from case, t
≤ 10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.2
1.4
V
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
pF
OUTPUT
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 A
VECO
7V
Collector emitter leakage current
VCE = 10 V, IF = 0,
Tamb = 100 °C
ICEO
50
nA
VCE = 30 V, IF = 0,
Tamb = 100 °C
ICEO
500
nA
COUPLER
Collector emitter saturation voltage
IF = 50 mA, IC = 2 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
110
kHz
Coupling capacitance
f = 1 MHz
Ck
1pF
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