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| 型号： | 4N26S1TA-V |
| 厂商： | Everlight Electronic Co., Ltd. |
| 英文描述： | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 中文描述： | 6引脚DIP光电晶体管光电耦合器 |
| 文件页数： | 8/13页 |
| 文件大小： | 376K |
| 代理商： | 4N26S1TA-V |
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd.
4
http:\\www.everlight.com
Document No：DPC-717-044 Rev. 0
September 12, 2007
4N2X Series
4N3X Series
H11AX Series
Transfer Characteristics (Ta=25°C unless specified otherwise)
Parameter
Symbol
Min.
Typ.*
Max.
Unit
Condition
4N35, 4N36,
4N37
100
-
H11A1
50
-
H11A5
30
-
4N25, 4N26,
4N38,
H11A2, H11A3
20
-
Current
transfer
ratio
4N27, 4N28,
H11A4
CTR
10
-
%
IF = 10mA, VCE = 10V
4N25, 4N26,
4N27, 4N28
-
0.5
IF = 50mA, Ic = 2mA
4N35, 4N36,
4N37
-
0.3
H11A1,
H11A2,
H11A3,
H11A4,
H11A5
-
0.4
IF = 10mA, Ic = 0.5mA
Collector-Emitter
saturation
voltage
4N38
VCE(sat)
-
1.0
V
IF = 20mA, Ic = 4mA
Isolation resistance
RIO
10
11
-
Ω
VIO = 500Vdc
Input-output capacitance
CIO
-
0.2
-
pF
VIO = 0, f = 1MHz
4N25, 4N26,
4N27, 4N28,
H11A1,
H11A2,
H11A3,
H11A4,
H11A5
-
3
10
VCC = 10V, IF = 10mA,
RL = 100Ω
See Fig. 11
Turn-on time
4N35, 4N36,
4N37, 4N38
Ton
-
10
12
s
VCC = 10V, IC = 2mA,
RL = 100Ω, See Fig. 11
4N25, 4N26,
4N27, 4N28,
H11A1,
H11A2,
H11A3,
H11A4
-
3
10
VCC = 10V, IF = 10mA,
RL = 100Ω
See Fig. 11
Turn-off time
4N35, 4N36,
4N37, 4N38
Toff
-
9
12
s
VCC = 10V, IC = 2mA,
RL = 100Ω, See Fig. 11
* Typical values at Ta = 25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 4N26S1TB-V | 制造商:EVERLIGHT 制造商全称:Everlight Electronics Co., Ltd 功能描述:6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N26SD | 功能描述:晶体管输出光电耦合器 Optocoupler SM-DIP6 Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N26SHORT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR) |
| 4N26SM | 功能描述:晶体管输出光电耦合器 PHOTO TRANS RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N26S-M | 制造商:Fairchild Semiconductor Corporation 功能描述:BULK / MOT TRANS OUTPUT, SURFACE MOUNT LEAD BEND |
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