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参数资料
| 型号： | 4N27 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, DIP-6 |
| 文件页数： | 2/7页 |
| 文件大小： | 125K |
| 代理商： | 4N27 |
Document Number: 83725
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.8, 07-Jan-10
133
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
COUPLER
Isolation test voltage
VISO
5000
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation thickness between emitter and
detector
≥ 0.4
mm
Comparative tracking index
DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Storage temperature
Tstg
- 55 to + 125
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
125
°C
Soldering temperature (2)
max.10 s dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage (2)
IF = 50 mA
VF
1.3
1.5
V
Reverse current (2)
VR = 3 V
IR
0.1
100
μA
Capacitance
VR = 0 V
CO
25
pF
OUTPUT
Collector base breakdown voltage (2)
IC = 100 μA
BVCBO
70
V
Collector emitter breakdown voltage (2)
IC = 1 mA
BVCEO
30
V
Emitter collector breakdown voltage (2)
IE = 100 μA
BVECO
7V
ICEO(dark) (2)
VCE = 10 V, (base open)
4N25
5
50
nA
4N26
5
50
nA
4N27
5
50
nA
4N28
10
100
nA
ICBO(dark) (2)
VCB = 10 V,
(emitter open)
220
nA
Collector emitter capacitance
VCE = 0
CCE
6pF
COUPLER
Isolation test voltage (2)
Peak, 60 Hz
VIO
5000
V
Saturation voltage, collector emitter
ICE = 2 mA, IF = 50 mA
VCE(sat)
0.5
V
Resistance, input output (2)
VIO = 500 V
RIO
100
G
Ω
Capacitance, input output
f = 1 MHz
CIO
0.6
pF
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
相关PDF资料 |
PDF描述 |
|---|---|
| 4N27R | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N26R | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N25R | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N27 | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N28 | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 4N27(SHORT) | 制造商:Toshiba America Electronic Components 功能描述:Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP |
| 4N27 | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P 制造商:Vishay Semiconductors 功能描述:Optocoupler |
| 4N27.300 | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
| 4N27.300 | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
| 4N27.300W | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
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