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参数资料
| 型号： | 4N29.300W |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER |
| 封装： | DIP-6 |
| 文件页数： | 10/16页 |
| 文件大小： | 354K |
| 代理商： | 4N29.300W |
4N29,
4N30,
4N31,
4N32,
4N33
General
Purpose
6-Pin
Photodarlington
Optocoupler
2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
3
Electrical Characteristics (TA = 25°C Unless otherwise specied.)
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Notes:
* Indicates JEDEC registered data.
1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current with VCE @ 10V.
2. Pulse test: pulse width = 300s, duty cycle
≤ 2.0% .
4. IF adjusted to IC = 2.0mA and IC = 0.7mA rms.
5. The frequency at which IC is 3dB down from the 1kHz value.
6. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
EMITTER
VF
Input Forward Voltage*
IF = 10mA
–
1.2
1.5
V
IR
Reverse Leakage Current*
VR = 3.0V
–
0.001
100
A
C
Capacitance*
VF = 0V, f = 1.0MHz
–
150
–
pF
DETECTOR
BVCEO
Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0
30
60
–
V
BVCBO
Collector-Base Breakdown Voltage*
IC = 100A, IE = 0
30
100
–
V
BVECO
Emitter-Collector Breakdown Voltage* IE = 100A, IB = 0
5.0
8
–
V
ICEO
Collector-Emitter Dark Current*
VCE = 10V, Base Open
–
1
100
nA
hFE
DC Current Gain
VCE = 5.0V, IC = 500A
–
5000
–
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
DC CHARACTERISTICS
IC(CTR)
Collector Output Current*(1, 2) IF = 10mA, VCE = 10V, IB = 0
4N32, 4N33
50 (500)
–
mA (%)
4N29, 4N30
10 (100)
–
4N31
5 (50)
–
VCE(SAT)
Saturation Voltage*(2)
IF = 8mA, IC = 2.0mA
4N29, 4N30, 4N32, 4N33
–
1.0
V
4N31
–
1.2
AC CHARACTERISTICS
ton
Turn-on Time
IF = 200mA, IC = 50mA,
VCC = 10V
––
5.0
S
toff
Turn-off Time
4N32, 4N33
IF = 200mA, IC = 50mA,
VCC = 10V
–
100
S
4N29, 4N30, 4N31
–
–40
BW
Bandwidth(3, 4)
–
30
–
kHz
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Units
VISO
Input-Output Isolation Voltage(5)
4N29, 4N30, 4N31, 4N32, 4N33
II-O ≤ 1A, Vrms, t = 1min.
5300
–
Vac(rms)
4N32*
VDC
2500
–
V
4N33*
VDC
1500
–
RISO
Isolation Resistance(5)
VI-O = 500VDC
–
1011
–
CISO
Isolation Capacitance(5)
VI-O = , f = 1MHz
–
0.8
–
pF
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