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参数资料
| 型号： | 4N35-X017 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, SMD, 6 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 139K |
| 代理商： | 4N35-X017 |
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83717
154
Rev. 1.7, 13-Oct-09
4N35-X, 4N36-X, 4N37-X, 4N38
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
60
mA
Surge current
t
≤ 10 s
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
OUTPUT
Collector emitter breakdown voltage
VCEO
70
V
Emitter base breakdown voltage
VEBO
7V
Collector current
IC
50
mA
t
≤ 1 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
VISO
5300
VRMS
Creepage
≥ 7mm
Clearance
≥ 7mm
Isolation thickness between emitter
and detector
≥ 0.4
mm
Comparative tracking index
DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
max.10 s dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
pF
Forward voltage (2)
IF = 10 mA
VF
1.3
1.5
V
IF = 10 mA, Tamb = - 55 °C
VF
0.9
1.3
1.7
V
Reverse current (2)
VR = 6 V
IR
0.1
10
A
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
OUTPUT
Collector emitter breakdown
voltage (2)
IC = 1 mA
4N35
BVCEO
30
V
4N36
BVCEO
30
V
4N37
BVCEO
30
V
4N38
BVCEO
80
V
Emitter collector breakdown
voltage (2)
IE = 100 A
BVECO
7V
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| 4N36 | 功能描述:晶体管输出光电耦合器 Phototransistor Out RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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