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参数资料
| 型号： | 4N35SR2VM_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 光电耦合器 |
| 英文描述： | 6-Pin DIP Package Phototransistor Output Optocoupler |
| 中文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | LEAD FREE, SURFACE MOUNT, DIP-6 |
| 文件页数： | 2/9页 |
| 文件大小： | 258K |
| 代理商： | 4N35SR2VM_NL |
2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2
2
4NXXM,
H11AXM
—
General
Purpose
6-Pin
Phototransistor
Optocoupler
s
Absolute Maximum Ratings (T
A = 25°C unless otherwise specied)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Electrical Characteristics (T
A = 25°C unless otherwise specied)
Individual Component Characteristics
Isolation Characteristics
*Typical values at TA = 25°C
Symbol
Parameter
Value
Units
TOTAL DEVICE
TSTG
Storage Temperature
-40 to +150
°C
TOPR
Operating Temperature
-40 to +100
°C
TSOL
Wave solder temperature (see page 8 for reow solder prole)
260 for 10 sec
°C
PD
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
250
mW
2.94
EMITTER
IF
DC/Average Forward Input Current
60
mA
VR
Reverse Input Voltage
6
V
IF(pk)
Forward Current – Peak (300s, 2% Duty Cycle)
3
A
PD
LED Power Dissipation @ TA = 25°C
Derate above 25°C
120
mW
1.41
mW/°C
DETECTOR
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
70
V
VECO
Emitter-Collector Voltage
7
V
PD
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
150
mW
1.76
mW/°C
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
EMITTER
VF
Input Forward Voltage
IF = 10mA
1.18
1.50
V
IR
Reverse Leakage Current
VR = 6.0V
0.001
10
A
DETECTOR
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1.0mA, IF = 0
30
100
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100A, IF = 0
70
120
V
BVECO
Emitter-Collector Breakdown Voltage
IE = 100A, IF = 0
7
10
V
ICEO
Collector-Emitter Dark Current
VCE = 10V, IF = 0
1
50
nA
ICBO
Collector-Base Dark Current
VCB = 10V
20
nA
CCE
Capacitance
VCE = 0V, f = 1 MHz
8
pF
Symbol
Characteristic
Test Conditions
Min.
Typ.*
Max.
Units
VISO
Input-Output Isolation Voltage
f = 60Hz, t = 1 sec
7500
Vac(pk)
RISO
Isolation Resistance
VI-O = 500 VDC
1011
CISO
Isolation Capacitance
VI-O = &, f = 1MHz
0.2
2
pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 4N35S-TA | 功能描述:晶体管输出光电耦合器 PTR 100%, 3.5KV RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N35S-TA1 | 功能描述:晶体管输出光电耦合器 PTR 100%, 3.5KV RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N35STA1-V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN-OUTPUT DC-INPUT OPTOCOUPLER |
| 4N35STA-V | 制造商:EVERLIGHT 制造商全称:Everlight Electronics Co., Ltd 功能描述:6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N35STB-V | 制造商:EVERLIGHT 制造商全称:Everlight Electronics Co., Ltd 功能描述:6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
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