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参数资料
| 型号： | 4N35V |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 4N35, 4N36, 4N37 - Optocoupler, Phototransistor Output, with Base Connection |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR >100% |
| 文件页数： | 2/7页 |
| 文件大小： | 125K |
| 代理商： | 4N35V |
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 81181
154
Rev. 1.2, 07-Jan-10
4N35, 4N36, 4N37
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering condditions for through hole devices (DIP).
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) Indicates JEDEC registered value.
COUPLER
Comparative tracking index
DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
max.10 s dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
pF
Forward voltage (2)
IF = 10 mA
VF
1.3
1.5
V
IF = 10 mA, Tamb = - 55 °C
VF
0.9
1.3
1.7
V
Reverse current (2)
VR = 6 V
IR
0.1
10
μA
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
OUTPUT
Collector emitter breakdown
voltage(2)
IC = 1 mA
4N35
BVCEO
30
V
4N36
BVCEO
30
V
4N37
BVCEO
30
V
Emitter collector breakdown
voltage(2)
IE = 100 μA
BVECO
7V
OUTPUT
Collector base breakdown
voltage (2)
IC = 100 μA, IB = 1 μA
4N35
BVCBO
70
V
4N36
BVCBO
70
V
4N37
BVCBO
70
V
Collector emitter leakage current (2)
VCE = 10 V, IF = 0
4N35
ICEO
550
nA
4N36
ICEO
550
nA
VCE = 10 V, IF = 0
4N37
ICEO
550
nA
VCE = 30 V, IF = 0,
Tamb = 100 °C
4N35
ICEO
500
μA
4N36
ICEO
500
μA
4N37
ICEO
500
μA
Collector emitter capacitance
VCE = 0
CCE
6pF
COUPLER
Resistance, input output (2)
VIO = 500 V
RIO
1011
Ω
Capacitance, input output
f = 1 MHz
CIO
0.6
pF
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
相关PDF资料 |
PDF描述 |
|---|---|
| 4N35 | OPTOISOLATOR, 100% CTR TRANSISTOR OUTPUT |
| 4N35S | IC 4N35S OPTOISOLATOR SMT |
| 4N37 | OPTOISOLATOR W/BASE 6-DIP |
| 4N37S | OPTOISOLATOR W/BASE SMD |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 4N35-V | 功能描述:晶体管输出光电耦合器 Optocouplers RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N35VM | 功能描述:晶体管输出光电耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N35V-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
| 4N35VM | 制造商:Fairchild Semiconductor Corporation 功能描述:MOT TRANS OUTPUT VDE :ROHS COMPLIANT |
| 4N35V-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
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