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参数资料
| 型号： | 4N36-X000 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR>100% |
| 文件页数： | 2/7页 |
| 文件大小： | 146K |
| 代理商： | 4N36-X000 |
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 16-Jan-12
2
Document Number: 83717
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
60
mA
Surge current
t
≤ 10 μs
IFSM
2.5
A
Power dissipation
Pdiss
70
mW
OUTPUT
Collector emitter breakdown voltage
VCEO
70
V
Emitter base breakdown voltage
VEBO
7V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp
≤ 10 ms
ICM
100
mA
Output power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
t = 1 s
VISO
5000
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation thickness between emitter
and detector
≥ 0.4
mm
Comparative tracking index
DIN IEC 112/VDE 0303, part 1
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Soldering temperature (1)
2 mm from case,
≤ 10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage (1)
IF = 10 mA
VF
1.2
1.5
V
IF = 10 mA, Tamb = - 55 °C
VF
0.9
1.3
1.7
V
Reverse current (1)
VR = 6 V
IR
0.1
10
μA
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
OUTPUT
Collector emitter breakdown
voltage (1)
IC = 1 mA
4N35
BVCEO
30
V
4N36
BVCEO
30
V
4N37
BVCEO
30
V
4N38
BVCEO
80
V
Emitter collector breakdown
voltage (1)
IE = 100 μA
BVECO
7V
Collector base breakdown
voltage (1)
IC = 100 μA, IB = 1 μA
4N35
BVCBO
70
V
4N36
BVCBO
70
V
4N37
BVCBO
70
V
4N38
BVCBO
80
V
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相关代理商/技术参数 |
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|---|---|
| 4N36-X007 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>100% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N36-X009 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>100% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N36-X009T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>100% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N37 | 功能描述:晶体管输出光电耦合器 Phototransistor Out RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N37(SHORT) | 制造商:Toshiba America Electronic Components 功能描述:PHOTOCOUPLER TRANS OUT 6-DIP |
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