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参数资料
| 型号： | 5082-0001 |
| 元件分类： | PIN二极管 |
| 英文描述： | 70 V, SILICON, PIN DIODE |
| 封装： | DIE-1 |
| 文件页数： | 2/2页 |
| 文件大小： | 31K |
| 代理商： | 5082-0001 |
Electrical Specifications at T
A = 25°C
Typical Parameters
Nearest
Typical
Chip
Equivalent
Minimum
Maximum
Typical
Reverse
Part
Packaged
Breakdown
Junction
Series
Typical
Recovery
Number
Part No.
Voltage
Capacitance
Resistance
Lifetime
Time
5082-
V
BR (V)
C
j (pF)
R
S ()
τ (ns)
t
rr (ns)
0001
3041
70
0.16*
0.8*
35*
5
0012
3001
150
0.12
1.0
400
100
Test
V
R = VBR
V
R = 50 V
I
F = 100 mA
I
F = 50 mA
I
F = 20 mA
Conditions
Measure
*V
R = 20 V
*I
F = 20 mA
I
R = 250 mA
V
R = 10 V
I
R ≤ 10 mA
f = 1 MHz
f = 100 MHz
*I
R = 6 mA
90% Recovery
*I
F = 10 mA
Assembly and Handling
Procedures for PIN Chips
1. Storage
Devices should be stored in a dry
nitrogen purged dessicator or
equivalent.
2. Cleaning
If required, surface contamination
may be removed with electronic
grade solvents. Typical solvents,
such as freon (T.F. or T.M.C.),
acetone, deionized water, and
methanol, or their locally ap-
proved equivalents, can be used
singularly or in combinations.
Typical cleaning times per solvent
are one to three minutes. DI water
and methanol should be used (in
that order) in the final cleans.
Final drying can be accomplished
by placing the cleaned dice on
clean filter paper and drying with
an infrared lamp for 5-10 minutes.
Acids such as hydrofluoric (HF),
nitric (HNO3) and hydrochloric
(HCl) should not be used.
The effects of cleaning methods/
solutions should be verified on
small samples prior to submitting
the entire lot.
Following cleaning, dice should
be either used in assembly
(typically within a few hours) or
stored in clean containers in a
reducing atmosphere or a vacuum
chamber.
3. Die Attach
a. Eutectic
5082-0001
AuSn preform with stage tempera-
ture of 300
°C for one minute max.
5082-0012
AuSn preform with stage tempera-
ture of 310
°C for one minute max.
AuGe preform with stage tem-
perature of 390
°C for one minute
max.
b. Epoxy
For epoxy die-attach, conductive
silver-filled or gold-filled epoxies
are recommended. This method
can be used for all Agilent PIN
chips.
4. Wire Bonding
Either ultrasonic or thermo-
compression bonding techniques
can be employed. Suggested wire
is pure gold, 0.7 to 1.5 mil diam-
eter. Ultrasonic bonding method
should be avoided for the
5082-0001 diode chip.
www.semiconductor.agilent.com
Data subject to change.
Copyright 1999 Agilent Technologies
5965-8880E (11/99)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 5082-0008 | 制造商:ASI 制造商全称:ASI 功能描述:STEP RECOVERY DIODE CHIP |
| 5082-0008_04 | 制造商:ASI 制造商全称:ASI 功能描述:STEP RECOVERY DIODE CHIP |
| 5082-0012 | 功能描述:PIN 二极管 150 VBR 0.12 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向电压:200 V 正向连续电流: 频率范围:10 MHz to 6 GHz 端接类型:SMD/SMT 封装 / 箱体:QFN-3 封装:Reel |
| 5082-0031 | 制造商:Hewlett Packard Co 功能描述:5082-0031 |
| 5082-0112 | 制造商:ASI 制造商全称:ASI 功能描述:GLASS PACKAGE STEP RECOVERY DIODE |
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