参数资料
型号: 5082-2811
元件分类: 射频混频器
英文描述: SILICON, MIXER DIODE
封装: GLASS PACKAGE-2
文件页数: 1/7页
文件大小: 249K
代理商: 5082-2811
1N5711, 1N5712, 5082-2800 Series
Schottky Barrier Diodes for
General Purpose Applications
Data Sheet
Description/Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated
Schottky barrier diodes which use a patented “guard ring”
design to achieve a high breakdown voltage. Packaged in
a low cost glass package, they are well suited for high level
detecting, mixing, switching, gating, log or A-D converting,
video detecting, frequency discriminating, sampling, and
wave shaping.
The 5082-2835 is a passivated Schottky diode in a low cost
glass package. It is optimized for low turn-on voltage. The
5082-2835 is particularly well suited for the UHF mixing
needs of the CATV marketplace.
Outline 15
Maximum Ratings
Junction Operating and Storage Temperature Range
1N5711, 1N5712, 5082-2800/10/11..... -65°C to +200°C
5082-2835 ..................................................... -60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at T
CASE = 25°C)
Derate linearly to zero at maximum rated temp.
1N5711, 1N5712, 5082-2800/10/11.....................250 mW
5082-2835 .....................................................................150 mW
Peak Inverse Voltage ................................................................ V
BR
Features
Low Turn-On Voltage As Low as 0.34 V at 1 mA
Pico Second Switching Speed
High Breakdown Voltage Up to 70 V
Matched Characteristics Available
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
CATHODE
DIMENSIONS IN MILLIMETERS AND (INCHES).
4.32 (.170)
3.81 (.150)
相关PDF资料
PDF描述
5082-3001#T25 200 V, SILICON, PIN DIODE
5082-3080#T25 100 V, SILICON, PIN DIODE
5082-3081#T50 100 V, SILICON, PIN DIODE
50PF120WPBF 50 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AB
50PF40PBF 50 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
相关代理商/技术参数
参数描述
5082-2811#T25 功能描述:肖特基二极管与整流器 15 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
5082-2811#T50 功能描述:肖特基二极管与整流器 15 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
5082-2811 制造商:Avago Technologies 功能描述:DIODE RF SCHOTTKY
5082-2817 制造商:ASI 制造商全称:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE
5082-2818 制造商:ASI 制造商全称:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE