参数资料
型号: 50WQ03FN
元件分类: 整流器
英文描述: 5.5 A, 30 V, SILICON, RECTIFIER DIODE, TO-252AA
封装: SIMILAR TO TO-252AA, DPAK-3
文件页数: 2/6页
文件大小: 68K
代理商: 50WQ03FN
50WQ03FN
Bulletin PD-20551 rev. E 03/03
2
www.irf.com
Part number
50WQ03FN
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
30
Voltage Ratings
V
FM
Max. Forward Voltage Drop
0.46
V
@
5A
* See Fig. 1
(1)
0.53
V
@ 10A
0.35
V
@
5A
0.46
V
@ 10A
I
RM
Max. Reverse Leakage Current
3
mA
T
J
= 25 °C
* See Fig. 2
(1)
58
mA
T
J
= 125 °C
V
F(TO)
Threshold Voltage
0.19
V
T
J
= T
J
max.
rt
Forward Slope Resistance
22.22
m
C
T
Typical Junction Capacitance
590
pF
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25 °C
LS
Typical Series Inductance
5.0
nH
Measured lead to lead 5mm from package body
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
Electrical Specifications
Parameters
50WQ...
Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J
Max.JunctionTemperatureRange (*) -40 to 150
°C
T
stg
Max. Storage Temperature Range
-40 to 150
°C
R
thJC
Max. Thermal Resistance Junction
3.0
°C/W DC operation
* See Fig. 4
to Case
wt
Approximate Weight
0.3 (0.01)
g (oz.)
Case Style
D - PAK
Similar to TO-252AA
Thermal-Mechanical Specifications
Parameters
50W...
Units
Conditions
I
F(AV)
Max. Average Forward Current
5.5
A
50% duty cycle @ T
C
= 136°C, rectangular wave form
* See Fig. 5
I
FSM
Max.PeakOneCycleNon-Repetitive
320
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 7
130
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy
10
mJ
T
J
= 25 °C, I
AS
= 2.0 Amps, L = 5 mH
I
AR
Repetitive Avalanche Current
2.0
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Absolute Maximum Ratings
Following any rated
load condition and with
rated V
RRM applied
A
Parameters
50WQ...
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
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