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参数资料
| 型号： | 50WQ10FNTRLPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 5.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 封装： | ROHS COMPLIANT, SIMILAR TO TO-252AA, DPAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 97K |
| 代理商： | 50WQ10FNTRLPBF |
Document Number: 94235
For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 08-Jul-09
1
Schottky Rectifier, 5.5 A
50WQ10FNPbF
Vishay High Power Products
FEATURES
Popular D-PAK outline
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
DESCRIPTION
The 50WQ10FNPbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC board. Typical applications are in
disk
drives,
switching
power
supplies,
converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
IF(AV)
5.5 A
VR
100 V
Base
cathode
Anode
1
3
4, 2
Anode
D-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
IF(AV)
Rectangular waveform
5.5
A
VRRM
100
V
IFSM
tp = 5 s sine
330
A
VF
5 Apk, TJ = 125 °C
0.63
V
TJ
Range
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
50WQ10FNPbF
UNITS
Maximum DC reverse voltage
VR
100
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
50 % duty cycle at TC = 135 °C, rectangular waveform
5.5
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 s sine or 3 s rect. pulse
Following any rated load
condition and with rated
VRRM applied
330
10 ms sine or 6 ms rect. pulse
110
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 0.5 A, L = 40 mH
6.0
mJ
Repetitive avalanche current
IAR
Current decaying linearly to zero in 1 s
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
A
相关PDF资料 |
PDF描述 |
|---|---|
| 50WQ10FNTRR | 5.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 50WQ10FNTR | 5.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 50WQ10FNTRRPBF | 5.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 50WQ10FNTRL | 5.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 50WQ10FNTRPBF | 5.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 50WQ10FNTRPBF | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 100V 5.5A 3-Pin(2+Tab) DPAK T/R 制造商:Vishay Intertechnologies 功能描述:50WQ10FNPbF Series 100 V 5.5 A High Frequency Schottky Rectifier - DPAK |
| 50WQ10FNTRR | 功能描述:肖特基二极管与整流器 5.5 Amp 100 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 50WQ10FNTRRPBF | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 100V 5.5A 3-Pin(2+Tab) DPAK T/R |
| 50WQ10G | 功能描述:肖特基二极管与整流器 5.5 Amp 100 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 50WQ10GPBF | 功能描述:肖特基二极管与整流器 5.5 Amp 100 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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