参数资料
型号: 52PFR120
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 50 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AB
封装: PLASTIC, DO-5, 1 PIN
文件页数: 2/9页
文件大小: 172K
代理商: 52PFR120
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93516
2
Revision: 01-Oct-08
50PF(R)...(W) Series
Vishay High Power Products
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 50 A
Notes
(1) As general recommendation we suggest to tight on Hexagon and not on nut
(2) Torque must be applicable only to Hexagon and not to plastic structure
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
50
A
140
°C
Maximum RMS forward current
IF(RMS)
78
A
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = 150 °C
800
A
t = 8.3 ms
830
t = 10 ms
100 % VRRM
reapplied
670
t = 8.3 ms
700
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
3200
A2s
t = 8.3 ms
2900
t = 10 ms
100 % VRRM
reapplied
2260
t = 8.3 ms
2050
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
32 000
A2
√s
Low level value of threshold voltage
VF(TO)
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
0.77
V
Low level value of forward
slope resistance
rf
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
4.30
m
Ω
Maximum forward voltage drop
VFM
Ipk = 125 A, TJ = 25 °C, tp = 400 s rectangular wave
1.40
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating and
storage temperature range
TJ, TStg
- 55 to 180
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.51
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.25
Allowable mounting torque
Tighting on nut (1)
Not lubricated threads
3.4 + 0 - 10 %
(30)
N m
(lbf in)
Tighting on Hexagon (2)
Lubricated threads
2.3 + 0 - 10 %
(20)
Approximate weight
15.8
g
0.56
oz.
Case style
See dimensions - link at the end of datasheet
DO-203AB (DO-5)
相关PDF资料
PDF描述
52PF120W 50 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AB
50PFR80 50 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AB
50PF80W 50 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AB
52PFR80W 50 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AB
50PF40W 50 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
相关代理商/技术参数
参数描述
52PFR120W 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A
52PFR40 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A
52PFR40W 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A
52PFR80 制造商:IRF 制造商全称:International Rectifier 功能描述:STANDARD RECOVERY DIODES GEN II DO5
52PFR80W 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A