- 您现在的位置：买卖IC网 > PDF目录91185 > 52PFR120W 50 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AB PDF资料下载
参数资料
| 型号： | 52PFR120W |
| 元件分类： | 整流器 |
| 英文描述： | 50 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 封装： | PLASTIC, DO-5, 1 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 619K |
| 代理商： | 52PFR120W |
50PF (R)...(W) Series
3
Bulletin I20105 rev. D 01/05
www.irf.com
Parameter
Units
Conditions
50PF (R)...(W)
40 to 120
TJ
Max. junction operating temperature range
-55 to 180
T
stg
Max. storage temperature range
-55 to 180
R
thJC
Max. thermal resistance, junction to case
0.51
DC operation
R
thCS
Max. thermal resistance, case
Mounting surface, smooth, flat and
to heatsink
greased
T
Allowable mounting torque
3.4 +0-10%
N m
Tighting on nut (1)
30
lbf
in Not lubricated threads
2.3 +0-10%
N m
Tighting on hexagon (2)
20
lbf
in Lubricated threads
wt
Approximate weight
15.8 (0.56)
g (oz)
Case style
DO-203AB (DO5)
See Outline Table
°C
0.25
K/W
Thermal and Mechanical Specifications
180°
0.11
0.10
T
J = TJ max.
120°
0.16
90°
0.20
0.22
60°
0.29
0.31
30°
0.49
0.50
Conduction angle
Sinusoidal conduction
Rectangular conduction Units
Conditions
K/W
R
thJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
(1) As general recommendation we suggest to tight on Hexagon and not on nut
(2) Torque must be appliable only to Hexagon and not to plastic structure
110
120
130
140
150
160
170
180
0
10
203040
5060
30
60
90
120
180
Conduction Angle
50PF(R) Serie
RthJC = 0.51 K/W
120
130
140
150
160
170
180
0
10
203040
5060
7080
DC
30
60
90
120
180
Conduction Period
50PF(R) Series
RthJC (DC) = 0.51 K/W
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum
Allowable
Case
Temperature
(°C)
Maximum
Allowable
Case
Temperature
(°C)
相关PDF资料 |
PDF描述 |
|---|---|
| 50PF120WPBF | 50 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 50PF40 | 50 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 52PF40WPBF | 50 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 50PF40 | 50 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 50PFR120 | 50 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 52PFR40 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A |
| 52PFR40W | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A |
| 52PFR80 | 制造商:IRF 制造商全称:International Rectifier 功能描述:STANDARD RECOVERY DIODES GEN II DO5 |
| 52PFR80W | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A |
| 52-PGM09018-30 | 功能描述:IC 与器件插座 PIN GRID ARRAY WIRE WRAP 52 PINS RoHS:否 制造商:Molex 产品:LGA Sockets 节距:1.02 mm 排数: 位置/触点数量:2011 触点电镀:Gold 安装风格:SMD/SMT 端接类型:Solder 插座/封装类型:LGA 2011 工作温度范围:- 40 C to + 100 C |
发布紧急采购，3分钟左右您将得到回复。