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参数资料
| 型号： | 54MT120KB |
| 厂商： | Vishay Semiconductors |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | RECT BRIDGE 1200V 50A INT-A-PAK |
| 标准包装： | 3 |
| 电压 - 峰值反向(最大)： | 1200V |
| 电流 - DC 正向(If)： | 50A |
| 二极管类型： | 三相 |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 安装类型： | 底座安装 |
| 封装/外壳： | INT-A-PAK（6 + 8） |
| 包装： | 散装 |
| 其它名称： | *54MT120KB VS-54MT120KB VS-54MT120KB-ND VS54MT120KB VS54MT120KB-ND |
54-94-104MT..KB Series
Bulletin I27504 08/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V RRM , maximum
V RSM , maximum
V DRM , max. repetitive
I RRM /I DRM max.
Type number
Code
repetitive peak
non-repetitive peak
peak off-state voltage,
@ T J = 125°C
reverse voltage
reverse voltage
gate open circuit
V
V
V
mA
80
100
800
1000
900
1100
800
1000
54MT..KB
94/104MT..KB
120
140
160
80
100
120
140
160
1200
1400
1600
800
1000
1200
1400
1600
1300
1500
1700
900
1100
1300
1500
1700
1200
1400
1600
800
1000
1200
1400
1600
20 *
40 *
* For single AC switch
Forward Conduction
Parameter
54MT.KB 94MT.KB 104MT.KB Units Conditions
I O
Maximum I RMS output current
@ Case temperature
50
80
90
80
100
80
A
°C
For all conduction angle
I TSM
Maximum peak, one-cycle
forward, non-repetitive
on state surge current
390
410
330
345
950
1000
800
840
1130
1180
950
1000
A
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V RRM
reapplied
Initial
I t
Maximum I t for fusing
A s
2
2
770
4525
6380
2
t = 10ms
No voltage
T J = T J max.
700
540
500
4130
3200
2920
5830
4510
4120
t = 8.3ms
t = 10ms
t = 8.3ms
reapplied
100% V RRM
reapplied
I 2 √ t
Maximum I 2 √ t for fusing
7700
45250
63800
A 2 √ s
t = 0.1 to 10ms, no voltage reapplied
V T(TO)1 Low level value of threshold
1.16
0.99
0.99
V
(16.7% x π x I T(AV) < I < π x I T(AV) ), @ T J max.
voltage
V T(TO)2 High level value of threshold
1.44
1.19
1.15
(I > π x I T(AV) ), @ T J max.
voltage
r t1
Low level value on-state
12.54
4.16
3.90
m ?
(16.7% x π x I T(AV) < I < π x I T(AV) ), @ T J max.
slope resistance
r t2
High level value on-state
11.00
3.56
3.48
(I > π x I T(AV) ), @ T J max.
slope resistance
V TM
Maximum on-state voltage drop
2.68
1.55
1.53
V
I pk = 150A, T J = 25°C
t p = 400μs single junction
di/dt
Max. non-repetitive rate
150
A/μs
T J = 25 o C, from 0.67 V DRM , I TM = π x I T(AV) ,
of rise of turned on current
I g = 500mA,t r < 0.5 μs, t p > 6 μs
I H
I L
2
Max. holding current
Max. latching current
200
400
mA
T J = 25 o C, anode supply = 6V,
resistive load, gate open circuit
T J = 25 o C, anode supply = 6V, resistive load
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 54MT120KBS90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|AC SWITCH|TRIPLE|FULLY-CNTLD|1.2KV V(RRM)|50A I(T) |
| 54MT120KPBF | 制造商:Vishay Intertechnologies 功能描述:Thyristor SCR Module 120V 410A 6-Pin INT-A-PAK |
| 54MT140K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|AC SWITCH|TRIPLE|FULLY-CNTLD|1.4KV V(RRM)|50A I(T) |
| 54MT140KB | 制造商:IRF 制造商全称:International Rectifier 功能描述:THREE PHASE AC SWITCH |
| 54MT140KBS90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:THYRISTOR MODULE|AC SWITCH|TRIPLE|FULLY-CNTLD|1.4KV V(RRM)|50A I(T) |
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