参数资料
型号: 5962-8671102ZA
厂商: NATIONAL SEMICONDUCTOR CORP
元件分类: 基准电压源/电流源
英文描述: 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.22 V, CDSO10
封装: CERAMIC, SOIC-10
文件页数: 4/10页
文件大小: 186K
代理商: 5962-8671102ZA
MICROCIRCUIT DATA SHEET
MNLM113-1-X REV 2A1
(Absolute Maximum Ratings)
(Note 1)
Power Dissipation
(Note 2)
100 mW
Reverse Current
50 mA
Forward Current
50 mA
Storage Temperature Range
-65 C < Ta < +150 C
Lead Temperature
300 C
(Soldering, 10 seconds)
Operating Temperature Range
-55 C < Ta < + 125 C
Maximum Junction Temperature
+150 C
Thermal Resistance
ThetaJA
440 C/W
METAL CAN
(Still Air)
TBD
(500LF/Min Air Flow)
218 C/W
CERAMIC SOIC
(Still Air)
140 C/W
(500LF/Min Air Flow)
ThetaJC
80 C/W
METAL CAN
27 C/W
CERAMIC SOIC
ESD Tolerance
(Note 3)
4000V
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to teh device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristices. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
Note 2:
The maximum perwer dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - Ta) /ThetaJA or the number
given in the Absolute Maximum Ratings, Whichever is lower.
Note 3:
Human body model, 1.5K Ohms in series with 100pF.
3
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