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参数资料
| 型号： | 5962F0151601VYA |
| 元件分类： | PROM |
| 英文描述： | 8K X 8 OTPROM, 55 ns, CDFP28 |
| 封装： | 0.490 X 0.740 INCH, 1.27 MM PITCH, FP-28 |
| 文件页数： | 8/12页 |
| 文件大小： | 88K |
| 代理商： | 5962F0151601VYA |
5
RADIATION HARDNESS
The UT28F64LV PROM incorporates special design and layout
features which allow operation in high-level radiation
environments. UTMC has developed special low-temperature
processing techniques designed to enhance the total-dose
radiation hardness of both the gate oxide and the field oxide while
maintaining the circuit density and reliability. For transient
radiation hardness and latchup immunity, UTMC builds all
radiation-hardened products on epitaxial wafers using an
advanced twin-tub CMOS process. In addition, UTMC pays
special attention to power and ground distribution during the
design phase, minimizing dose-rate upset caused by rail collapse.
RADIATION HARDNESS DESIGN SPECIFICATIONS
1
Note:
1. The PROM will not latchup during radiation exposure under recommended operating conditions.
Figure 2. PROM Read Cycle
tAVAV
tAVQV
tELQV
tGLQV
tAVQV
tAXQX
tEHQZ
tGHQZ
A(12:0)
CE
OE
DQ(7:0)
tGLQX
tELQX
Total Dose
5.0E5
rad(Si)
Latchup LET Threshold
>128
MeV-cm
2/mg
Memory Cell LET Threshold
>128
MeV-cm
2/mg
Transient Upset LET Threshold
54
MeV-cm
2/mg
Transient Upset Device Cross Section @ LET=128 MeV-cm
2/mg
1E-6
cm
2
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| 5962F0254501VZA | 功能描述:运算放大器 - 运放 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| 5962F0254601VPA | 功能描述:运算放大器 - 运放 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
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