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| 型号： | 5962F0251102VEC |
| 厂商： | INTERSIL CORP |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING CONTROLLER, 425 kHz SWITCHING FREQ-MAX, CDIP16 |
| 封装： | HERMETIC SEALED, CERAMIC, DIP-16 |
| 文件页数： | 3/3页 |
| 文件大小： | 63K |
| 代理商： | 5962F0251102VEC |
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FN9065.3
September 25, 2008
Die Characteristics
DIE DIMENSIONS:
4310m x 5840m (170 mils x 230 mils)
Thickness: 483m ± 25.4m (19 mils ± 1 mil)
INTERFACE MATERIALS
Glassivation
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8.0kA ± 1.0kA
Top Metallization
Type: AlSiCu
Thickness: 16.0kA ± 2kA
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
585
Metallization Mask Layout
IS-1825ASRH/ISL71823ASRH
VC
VREF
INV
NON-INV
E/A OUT
CLK/LEB
CT
RAMP
SS
ILIM/SD
OGND
GND
OUT A
PGND
OUT B
VCC
Notes:
1.
Both the OGND (oscillator ground) and the GND (control circuit ground) pads must be bonded to ground.
These pads are both bonded to the GND pin on the packaged devices.
2.
All double-sized bond pads must be double bonded for current sharing purposes.
RT
IS-1825ASRH, ISL71823ASRH
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| 5962F0254601VPA | 功能描述:运算放大器 - 运放 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
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