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Die Characteristics
DIE DIMENSIONS:
69 mils x 92 mils x 19 mils
±1 mil
1750 x 2330 x 355
m ±25.4m
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4k
±0.5k
Top Metallization:
Type: Metal 1: AICu(2%)/TiW
Type: Metal 2: AICu(2%)
Thickness: Metal 1: 8k
±0.4k
Thickness: Metal 2: 16k
±0.8k
Substrate:
UHF-1X, Bonded Wafer, DI
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Floating
ADDITIONAL INFORMATION:
Worst Case Current Density:
< 2 x 105 A/cm2
Transistor Count:
150
Metallization Mask Layout
HS-1245RH
NOTE: This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of the DISABLE inputs when
using asymmetrical supplies (e.g., V+ = 10V, V- = 0V). See the “Application Information” section for details.
V-
OUT2
+IN1
-IN1
V+
VL
+IN2
OUT1
-IN2
NC
GND (NOTE)
DISABLE1
DISABLE2
V-
HS-1245RH