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参数资料
| 型号： | 5962G0151601VXA |
| 元件分类： | PROM |
| 英文描述： | 8K X 8 OTPROM, 55 ns, CDIP28 |
| 封装： | 0.600 X 1.400 INCH, 2.54 MM PITCH, CERAMIC, DIP-28 |
| 文件页数： | 7/11页 |
| 文件大小： | 152K |
| 代理商： | 5962G0151601VXA |
5
RADIATION HARDNESS
The UT28F64LV PROM incorporates special design and layout
features which allow operation in high-level radiation
environments. UTMC has developed special low-temperature
processing techniques designed to enhance the total-dose
radiation hardness of both the gate oxide and the field oxide while
maintaining the circuit density and reliability. For transient
radiation hardness and latchup immunity, UTMC builds all
radiation-hardened products on epitaxial wafers using an
advanced twin-tub CMOS process. In addition, UTMC pays
special attention to power and ground distribution during the
design phase, minimizing dose-rate upset caused by rail collapse.
RADIATION HARDNESS DESIGN SPECIFICATIONS 1
Note:
1. The PROM will not latchup during radiation exposure under recommended operating conditions.
Figure 2. PROM Read Cycle
tAVAV
tAVQV
t
ELQV
tGLQV
t
AVQV
t
AXQX
tEHQZ
tGHQZ
A(12:0)
CE
OE
DQ(7:0)
t
GLQX
tELQX
Total Dose
5.0E5
rad(Si)
Latchup LET Threshold
>128
MeV-cm
2/mg
Memory Cell LET Threshold
>128
MeV-cm2/mg
Transient Upset LET Threshold
54
MeV-cm2/mg
Transient Upset Device Cross Section @ LET=128 MeV-cm2/mg
1E-6
cm2
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| 5962H94A0305QXC | 制造商: 功能描述: 制造商:undefined 功能描述: |
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| 5962L0052401VGA | 功能描述:校验器 IC RoHS:否 制造商:STMicroelectronics 产品: 比较器类型: 通道数量: 输出类型:Push-Pull 电源电压-最大:5.5 V 电源电压-最小:1.1 V 补偿电压（最大值）:6 mV 电源电流（最大值）:1350 nA 响应时间: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SC-70-5 封装:Reel |
| 5962L0052401VHA | 功能描述:校验器 IC RoHS:否 制造商:STMicroelectronics 产品: 比较器类型: 通道数量: 输出类型:Push-Pull 电源电压-最大:5.5 V 电源电压-最小:1.1 V 补偿电压（最大值）:6 mV 电源电流（最大值）:1350 nA 响应时间: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SC-70-5 封装:Reel |
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