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参数资料
| 型号： | 5962R8771002VGA |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 运算放大器 |
| 英文描述： | DUAL OP-AMP, 4000 uV OFFSET-MAX, 1 MHz BAND WIDTH, MBCY8 |
| 封装： | METAL CAN, TO-99, 8 PIN |
| 文件页数： | 26/26页 |
| 文件大小： | 494K |
| 代理商： | 5962R8771002VGA |
SMD 5962–8771003, ELDRS Free Only
DC Drift Parameters
The following conditions apply, unless otherwise specified.
All voltages referenced to device ground.
Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only.
Symbol
Parameter
Conditions
Notes
Min
Max
Units
Sub-
groups
V
IO
Input Offset Voltage
+V
CC = 30V, VCM = 0V,
R
S = 50, VO = 1.4V
-0.5
0.5
mV
1
+V
CC = 30V, VCM = 28.5V,
R
S = 50, VO = 1.4V
-0.5
0.5
mV
1
+V
CC = 5V, VCM = 0V,
R
S = 50, VO = 1.4V
-0.5
0.5
mV
1
±I
IB
Input Bias Current
+V
CC = 5V, VCM = 0V
(Note 6)
-10
10
nA
1
SMD 5962–8771003, ELDRS Free Only
100K Post Radiation Limits @ +25°C (Note 12)
DC Parameters
The following conditions apply, unless otherwise specified.
All voltages referenced to device ground.
Symbol
Parameter
Conditions
Notes
Min
Max
Units
Sub -
groups
V
IO
Input Offset Voltage
+V
CC = 30V, VCM = 0V,
R
S = 50, VO = 1.4V
(Note 12)
-4.0
4.0
mV
1
+V
CC = 30V, VCM = 28.5V,
R
S = 50, VO = 1.4V
(Note 12)
-4.0
4.0
mV
1
+V
CC = 5V, VCM = 0V,
R
S = 50, VO = 1.4V
(Note 12)
-4.0
4.0
mV
1
±I
IB
Input Bias Current
+V
CC = 5V, VCM = 0V
(Notes 6,
-60
-1.0
nA
1
Note 2:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 3:
The maximum power dissipation must be derated at elevated temperatures and is dictated by T
Jmax (maximum junction temperature), θJA (package
junction to ambient thermal resistance), and T
A (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/
θ
JA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 4:
Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output
current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15V, continuous short-circuits can exceed the
power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.
Note 5:
This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+voltage level (or to ground for a large overdrive) for the time
duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again
returns to a value greater than 0.3V (at 25°C).
Note 6:
The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output
so no loading change exists on the input lines.
Note 7:
The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3V (at 25°C). The upper end of the
common-mode voltage range is V+ 1.5V (at 25°C), but either or both inputs can go to +32V without damage, independent of the magnitude of V+.
Note 8:
Human body model, 1.5 k
Ω in series with 100 pF.
Note 9:
Guaranteed by input offset voltage.
Note 10:
Guaranteed parameter not tested.
Note 11:
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate sensitivity. Radiation end point limits for the noted
parameters are guaranteed only for the conditions as specified in MIL-STD-883, per Test Method 1019, Condition A.
Note 12:
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be sensitive in a high dose environment. Low dose rate testing has been performed on a wafer-by-wafer basis, per Test Method 1019, Condition
D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS).
9
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LM158QML
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相关代理商/技术参数 |
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|---|---|
| 5962R8771002VPA | 功能描述:运算放大器 - 运放 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| 5962R8771002VXA | 功能描述:运算放大器 - 运放 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| 5962R8771003VGA | 制造商:Texas Instruments 功能描述:5962R8771003VGA LOW POWER DUAL OPERATION - Rail/Tube |
| 5962R8771003VXA | 功能描述:运算放大器 - 运放 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
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