LM193A - 100K Radiation Electrical Characteristics (Continued)
DC Drift Parameters
The following conditions apply, unless otherwise specified.
+V = 5V, V
CM = 0V
Delta calculations performed on QMLV devices at Group B, Subgroup 5 only
Symbol
Parameter
Conditions
Notes
Min
Max
Unit
Sub-
groups
V
IO
Input Offset Voltage
+V = 30V
-1.0
1.0
mV
1
±I
IB
Input Bias Current
-15
15
nA
1
AC Parameters - Post Radiation Limits @ +25°C
The following conditions apply, unless otherwise specified.
+V = 5V, V
CM = 0V
Symbol
Parameter
Conditions
Notes
Min
Max
Unit
Sub-
groups
t
RLH
Response Time
V
OD = 50mV
1.0
S
9
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2:
The maximum power dissipation must be derated at elevated temperatures and is dictated by T
Jmax (maximum junction temperature), θJA (package
junction to ambient thermal resistance), and T
A (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/
θ
JA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 3:
The LM193A must be derated based on a 150°C, T
Jmax. The low bias dissipation and the ON-OFF characteristic of the outputs keep the chip dissipation
very small (P
D ≤ 100mV), provided the output transistors are allowed to saturate.
Note 4:
Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output
current is approximately 20 mA independent of the magnitude of V+.
Note 5:
This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the comparators to go to the V+ voltage level (or to ground for a large overdrive) for the
time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again
returns to a value greater than 0.3V
DC.
Note 6:
Positive excursions of input voltage may exceed the power supply level. As long as the other voltage remains within the common-mode range, the
comparator will provide a proper output state. The low input voltage state must not be less than 0.3V (or 0.3V below the magnitude of the negative power supply,
if used).
Note 7:
Human body model, 1.5K
in series with 100pF.
Note 8:
Parameter guaranteed by the V
IO tests.
Note 9:
Datalog reading in K = V/mV.
Note 10:
The value for V
Diff is not datalogged during Read and Record.
Note 11:
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019
7
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LM193A/LM193QML