参数资料
型号: 5962R9863901VPX
厂商: ANALOG DEVICES INC
元件分类: 运算放大器
英文描述: OP-AMP, 400 uV OFFSET-MAX, CDIP8
封装: CERAMIC, DIP-8
文件页数: 3/13页
文件大小: 72K
代理商: 5962R9863901VPX
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-98639
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
11
DSCC FORM 2234
APR 97
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of
MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance
with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified
in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b. Subgroups 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-
STD-883.
b.
TA = +125
°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or
approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test
circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-
STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein). RHA levels for device classes M, Q, and V shall be as specified in MIL-PRF-38535. End-point electrical
parameters shall be as specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method
1019, condition A and as specified herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater than 5k
rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation
end-point electrical parameter limit at 25
°C ±5°C. Testing shall be performed at initial qualification and after any design or process
changes which may affect the RHA response of the device.
4.4.4.2 Dose rate burnout. When required by the customer test shall be performed on devices, SEC, or approved test structures
at technology qualifications and after any design or process changes which may effect the RHA capability of the process. Dose rate
burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q
and V or MIL-PRF-38535, appendix A for device class M.
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