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参数资料
| 型号： | 5962R9951501VHA |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 运算放大器 |
| 英文描述： | OP-AMP, 3000 uV OFFSET-MAX, CDFP10 |
| 封装： | CERPACK-10 |
| 文件页数： | 13/15页 |
| 文件大小： | 299K |
| 代理商： | 5962R9951501VHA |
MRLM101A-X-RH REV 1B2
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC:
+Vcc = +20V, Vcm = 0V, Rs = 50 Ohms.
"Delta calculations performed on JAN S and QMLV devices at group
B, subgroup 5 only".
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
Vio
Input Offset
Voltage
Vcm = 0V
-0.5
0.5
mV
1
Iib+
Input Bias
Current
Vcm = 0V, Rs = 100K Ohms
-7.5
7.5
nA
1
Iib-
Input Bias
Current
Vcm = 0V, Rs = 100K Ohms
-7.5
7.5
nA
1
Note 1:
Calculated parameter.
Note 2:
Datalog reading of K = V/mV.
Note 3:
Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics except as listed in the Post Radiation Limits Table. These
parts may be dose rate sensitive in a space environment and demonstrate enhanced low
dose rate effect. Radiation end point limits for the noted parameters are guaranteed
only for the conditions as specified in MIL-STD-883, Method 1019.5
7
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