参数资料
型号: 5KP6.5CA-G
厂商: Comchip Technology
文件页数: 1/5页
文件大小: 0K
描述: TVS 5000W 6.5V BIDIR R-6
标准包装: 250
电压 - 反向隔离(标准值): 6.5V
电压 - 击穿: 7.22V
功率(瓦特): 5000W
电极标记: 双向
安装类型: 通孔
封装/外壳: R6,轴向
供应商设备封装: R-6
包装: 带盒(TB)
5000W Transient Voltage Suppressor
COMCHIP
SMD Diodes Specialist
5KP-G Series
Stand-off Voltage: 6.8V ~ 220V
Power Dissipation: 5000 Watts
RoHS Device
Features
-Glass passivated chip.
R-6
-Low leakage.
-Uni and Bidirection unit.
1.0(25.4)
MIN.
0.052(1.32)
0.048(1.22)
DIA.
-Excellent clamping capability.
-The plastic material has UL recognition 94V-0.
-Fast response time.
0.360(9.14)
0.340(8.64)
Mechanical Data
-Case: Molded plastic R-6
-Polarity: By cathode band denotes uni-directional
device, none cathode band denotes bi-directional
1.0(25.4)
MIN.
0.360(9.14)
0.340(8.64)
DIA.
Rating at 25 C ambient temperature unless otherwise specified.
device
-Weight: 2.1 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
O
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derated current by 20%.
Power dissipation on infinite heatsink at T L =75 C
Parameter
Peak power dissipation with a 10/1000 μ s
waveform (Note 1)
Peak pulse current with a 10/1000 μ s waveform
(Note 1)
Peak forward surge current, 8.3ms single
half sine-wave unidirectional only (Note 2)
Maximum instantaneous forward voltage at
100A for uni-directional devices only (Note 3)
O
Symbol
P PP
I PP
P D
I FSM
V F
Value
5000
See Next Table
8.0
500
3.5 / 5.0
Unit
W
W
W
A
V
Operating junction and storage temperature
range
T J , T STG
-55 to +150
O
C
NTOES:
O
(1) Non-repetitive current pulse, per fig.5 and derated above T A =25 C per fig. 1.
(2) Measured on 8.3 ms single half sine wave of equivalent square wave,duty cycle=4 pulses per minute maximum.
(3) V F <3.5V for devices of V BR <200V and V F < 5.0V for devices of V BR > 201V
REV:B
QW-BTV08
Page 1
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