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参数资料
| 型号： | 5KP85CB |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 5000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 125K |
| 代理商： | 5KP85CB |
86
www.littelfuse.com
2007 Littelfuse
Specications are subject to change without notice.
Transient Voltage Suppression Diodes
Axial Leaded – 5000W
5KP Series
P
PPM
-
Peak
Pulse
Power
(kW)
t
d - Pulse Width (sec.)
0.1μs
1.0μs
10μs
100μs
1.0ms
10ms
100
10
1
0.1
Non-repetitive pulse
waveform shown in
Fig.3 T
A=25C
Ratings and Characteristic Curves (T
A=25°C unless otherwise noted)
I PPM
-P
eak
P
ulse
Cur
rent,
%
I
RSM
0
50
100
150
1.0
2.0
3.0
4.0
tr=10μsec
Peak Value
IPPM
2
TJ=25°C
Pulse Width(td) is dened
as the point where the peak
current decays to 50% of IPPM
10/1000μsec. Waveform
as dened by R.E.A
td
t-Time (ms)
Half Value
IPPM
( )
Peak
Pulse
Power
(kW)
T
A - Ambient Temperature (C)
0
25
50
75
100
125 150 175 200
100
75
50
25
0
1
10
100
1000
10000
100000
1.0
10.0
100.0
1000.0
C
j(
pF)
Tj=25C
f=1.0MHz
Vsig=50mVp-p
Uni-directional V=0V
V
BR - Reverse Breakdown Voltage (V)
Uni-directional @ V
R
Bi-directional V=0V
Bi-directional @ V
R
0
1
2
3
4
5
6
7
8
9
0
25
50
75
100
125
150
175
200
S
tead
y
S
tate
P
o
wer
D
is
s
ip
a
ti
o
n
(W
)
T
L - Lead Te mpe ra ture (C)
L = 0.375” (9.5mm)
Lead Lengths
Figure 1 - Peak Pulse Power Rating Curve
Figure 2 - Pulse Derating Curve
Figure 3 - Pulse Waveform
Figure 4 - Typical Junction Capacitance
Figure 5 - Steady State Power Derating Curve
0
50
100
150
200
250
300
350
400
450
110
100
Number of Cycles at 60 Hz
I FSM
,Peak
Forward
Surge
Current
(A)
Figure 6 - Maximum Non-Repetitive Peak Forward
Surge Current
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 5KP85C-B | 功能描述:TVS 二极管 - 瞬态电压抑制器 10% bi-dir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 5KP85C-BP | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:5000 Watt Transient Voltage Suppressors 5.0 to 110 Volts |
| 5KP85CE3/TR13 | 功能描述:TVS DIODE 85VWM 151VC P600 制造商:microsemi corporation 系列:- 包装:带卷（TR） 零件状态:有效 类型:齐纳 单向通道:- 双向通道:1 电压 - 反向关态（典型值）:85V 电压 - 击穿（最小值）:94.4V 电压 - 箝位（最大值）@ Ipp:151V 电流 - 峰值脉冲（10/1000μs）:33.1A 功率 - 峰值脉冲:5000W（5kW） 电源线路保护:无 应用:通用 不同频率时的电容:- 工作温度:-55°C ~ 175°C（TJ） 安装类型:通孔 封装/外壳:P600，轴向 供应商器件封装:P600 标准包装:500 |
| 5KP85C-T | 功能描述:TVS 二极管 - 瞬态电压抑制器 10% bi-dir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 5KP85C-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode TVS Single Bi-Dir 85V 5KW 2-Pin Case R-6 T/R |
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