参数资料
型号: 5SDA05P4417
厂商: ABB SWITZERLAND LTD SEMICONDUCTORS
元件分类: 整流器
英文描述: 520 A, 4400 V, SILICON, RECTIFIER DIODE
封装: P1, 1 PIN
文件页数: 3/3页
文件大小: 46K
代理商: 5SDA05P4417
5SDA 05P50
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DA/130/04 Jul-10
3 of 3
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse
voltage
Tj = -40 ÷ 160 °C
5SDA 05P50..
5SDA 05P44..
5 000
4 400
V
VRSM
Non-repetitive peak reverse
voltage
Tj = -40 ÷ 160 °C
5SDA 05P50..
5SDA 05P44..
5 000
4 400
V
IFAVm
Average forward current
Tc = 85 °C
520
A
IFRMS
RMS forward current
Tc = 85 °C
817
A
IRRM
Repetitive reverse current
VR = VRRM
50
mA
tp = 8.3 ms
7 500
A
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 10 ms
7 000
A
tp = 8.3 ms
232 000
A
2s
I
2t
Limiting load integral
VR = 0 V, half sine pulse
tp = 10 ms
245 000
A
2s
Tj = 45 °C
70
kW
PRSM
Maximum avalanche power
dissipation
tp = 20 s, single pulse
Tj = 160 °C
50
kW
Tjmin -Tjmax
Operating temperature range
-40 ÷ 160
°C
TSTG
Storage temperature range
-40 ÷ 160
°C
Unless otherwise specified Tj = 160 °C
Value
Characteristics
min
typ
max
Unit
VT0
Threshold voltage
1.100
V
rT
Forward slope resistance
IF1 = 800 A, IF2 = 2 400 A
1.010
m
VFM
Maximum forward voltage
IFM = 1 800 A, Tj = 25 °C
2.400
V
Rthjc
Thermal resistance junction to case
60
K/kW
Unless otherwise specified Tj = 160 °C
Notes:
相关PDF资料
PDF描述
5SDA05P4437 520 A, 4400 V, SILICON, RECTIFIER DIODE
5SDA05P5037 520 A, 5000 V, SILICON, RECTIFIER DIODE
5SDA05P4447 520 A, 4400 V, SILICON, RECTIFIER DIODE
5SDA05P5027 520 A, 5000 V, SILICON, RECTIFIER DIODE
5SDA05P5017 520 A, 5000 V, SILICON, RECTIFIER DIODE
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