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参数资料
| 型号： | 5SDD19T3000 |
| 厂商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 1926 A, 3000 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 2/6页 |
| 文件大小： | 84K |
| 代理商： | 5SDD19T3000 |
5SDD 19T3000
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/116/04 Jul-10
2 of 6
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse
voltage
Tj = -40 ÷ 150 °C
5SDD 19T3000
5SDD 19T2800
3 000
2 800
V
IFAVm
Average forward current
Tc = 85 °C
1 926
A
IFRMS
RMS forward current
Tc = 85 °C
3 025
A
IRRM
Repetitive reverse current
VR = VRRM
40
mA
tp = 10 ms
26 000
IFSM
Peak non-repetitive surge
half sine pulse, VR = 0 V
tp = 8.3 ms
27 800
A
tp = 10 ms
20 800
IFSM
Peak non-repetitive surge
half sine pulse, VR = 0.7 VRRM
tp = 8.3 ms
22 200
A
tp = 10 ms
3 338 000
I
2t
Limiting load integral
half sine pulse, VR = 0 V
tp = 8.3 ms
3 210 000
A
2s
tp = 10 ms
2 163 000
I
2t
Limiting load integral
half sine pulse, VR = 0.7 VRRM
tp = 8.3 ms
2 045 000
A
2s
Tjmin -Tjmax
Operating temperature range
-40 ÷ 150
°C
TSTG
Storage temperature range
-40 ÷ 175
°C
Unless otherwise specified Tj = 150 °C
Value
Characteristics
min
typ
max
Unit
VT0
Threshold voltage
0.972
V
rT
Forward slope resistance
IF1 = 2 969 A, IF2 = 8 906 A
0.149
m
VFM
Maximum forward voltage
IFM = 5 000 A, Tj = 25 °C
1.575
V
Qrr
Recovered charge
VR = 100 V, IFM = 1 000 A, di/dt = -30 A/s
3 800
C
Unless otherwise specified Tj = 150 °C
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