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参数资料
| 型号： | 5SLY12G1200 |
| 厂商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 100 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封装： | 8.40 X 8.40 MM, DIE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 111K |
| 代理商： | 5SLY12G1200 |
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
1200 V
IF
=
100 A
Die size: 8.4 x 8.4 mm
Doc. No. 5SYA 1683-00 Nov 09
Ultra low losses
Fast and soft reverse-recovery
Highly rugged SPT+ design
Passivation: Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter
Symbol
Conditions
min
max
Unit
Repetitive peak reverse voltage
VRRM
1200
V
Continuous forward current
IF
100
A
Repetitive peak forward current
IFRM
Limited by Tvjmax
200
A
Junction temperature
Tvj
-40
150
°C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter
Symbol
Conditions
min
typ
max
Unit
Tvj = 25 °C
1.8
V
Continuous forward voltage
VF
IF = 100 A
Tvj = 125 °C
1.85
V
Tvj = 25 °C
100
A
Continuous reverse current
IR
VR = 1200 V
Tvj = 125 °C
1
mA
Tvj = 25 °C
83
A
Peak reverse recovery current
Irr
Tvj = 125 °C
110
A
Tvj = 25 °C
13
C
Recovered charge
Qrr
Tvj = 125 °C
25
C
Tvj = 25 °C
250
ns
Reverse recovery time
trr
Tvj = 125 °C
380
ns
Tvj = 25 °C
4.8
mJ
Reverse recovery energy
Erec
IF = 100 A,
VR = 600 V,
di/dt = 2100 A/s,
Lσ = 60 nH,
Inductive load,
Switch:
1x 5SMY12K1201
Tvj = 125 °C
10
mJ
2) Characteristic values according to IEC 60747 - 2
Diode-Die
5SLY 12G1200
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