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参数资料
| 型号： | 60S1-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 整流器 |
| 英文描述： | 6 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 445K |
| 代理商： | 60S1-BP |
60S05
thru
60S10
Rectifier
50 - 1000 Volts
Features
High Surge Current Capability and Low Leakage
Glass Passivated Chip
Maximum Ratings
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
6.0A
TA = 100
°C
Peak Forward Surge
Current
IFSM
200A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
VF
1.0V
IFM = 6.0A;
TJ = 25
°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
5A
100
A
TJ = 25
°C
TJ = 100
°C
Typical Junction
Capacitance
CJ
150pF
Measured at
1.0MHz, VR=4.0V
MCC
Operating Junction Temperature: -55
°C to +150°C
Storage Temperature: -55
°C to +150°C
MCC
Catalog
Number
Device
Marking
Maximum
Reccurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
60S05
50V
35V
50V
60S1
100V
70V
100V
60S2
200V
140V
200V
60S4
400V
280V
400V
60S6
600V
420V
600V
60S8
800V
560V
800V
60S10
1000V
700V
1000V
6 Amp Axial-Lead
Glass Passivated
DO-201AD
A
B
C
D
Cathode
Mark
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
C
.048
.052
1.20
1.30
D
1.000
---
25.40
---
omponents
20736 Marilla
Street Chatsworth
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Revision: A
2011/01/01
TM
Micro Commercial Components
A
.287
.374
7.30
9.50
B
.189
.208
4.80
5.30
www.mccsemi.com
1 of 3
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2.Pulse test: Pulse width 300 sec, Duty cycle 1%
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
相关PDF资料 |
PDF描述 |
|---|---|
| 60S05-TP | 6 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 60S10-TP | 6 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 60S8-AP | 6 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 60S451-200N1 | PANEL MOUNT, MALE, RF CONNECTOR, SOLDER, PLUG |
| 60SB03S | 60 A, 30 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 60S1E3 | 制造商:Microsemi Corporation 功能描述:DIODE STANDARD 6A 100V |
| 60S1-TP | 功能描述:整流器 Standard 100V 6A RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 60S2 | 制造商:Microsemi Corporation 功能描述:DIODE 6A 200V |
| 60S2E3 | 制造商:Microsemi Corporation 功能描述:DIODE STANDARD 6A 200V |
| 60S2-TP | 功能描述:整流器 6 Amp 50-1000V Rectifier RoHS:否 制造商:Power Integrations 产品:Fast Recovery Rectifiers 配置:Dual 反向电压:200 V 正向电压下降:1.1 V 恢复时间:13.9 ns 正向连续电流:5 A 最大浪涌电流:60 A 反向电流 IR:250 uA 安装风格:SMD/SMT 封装 / 箱体:DPAK 封装:Reel |
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