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参数资料
| 型号： | 63CTQ100PBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | LEAD FREE, PLASTIC, TO-220, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 138K |
| 代理商： | 63CTQ100PBF |
Document Number: 94245
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 13-Aug-08
3
63CTQ100PbF
Schottky Rectifier, 2 x 30 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
0.8
1.4
VFM - Forward Voltage Drop (V)
I F
-
Instantaneous
Forwar
d
Current
(A)
100
0.4
0
0.2
0.6
1.0
1.8
1000
T
J = 175 °C
T
J = 125 °C
T
J = 25 °C
1.6
1.2
0.1
1
10
100
0.0001
0
VR - Reverse Voltage (V)
I R
-
Re
ver
se
Current
(mA)
100
1000
80
60
40
20
0.01
0.001
T
J = 150 °C
T
J = 25 °C
T
J = 50 °C
T
J = 100 °C
T
J = 125 °C
T
J = 75 °C
T
J = 175 °C
1000
080
VR - Reverse Voltage (V)
C
T
-
J
unction
Capacitance
(pF)
40
100
60
20
T
J = 25 °C
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
-
Thermal
Impedance
(°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.001
Notes:
1. Duty factor D = t
1/t2
2. Peak T
J = PDM x ZthJC + TC
P
DM
t
1
t
2
10
0.01
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